SCHEMBL5367119

SCHEMBL5367119

C=CO[SiH](C)OC=C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31467746 0.83
SCHEMBL5013813 0.77
SCHEMBL29859973 0.67
SCHEMBL5367122 0.65
SCHEMBL2004135 0.65
SCHEMBL5350369 0.62
SCHEMBL10613136 0.62
SCHEMBL5685943 0.61
Propene SCHEMBL29212871 0.59
SCHEMBL9063817 0.59

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20040033445-A1 Method of forming a photoresist pattern and method for patterning a layer using a photoresist SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-02-19 US claimed
US-7297466-B2 Method of forming a photoresist pattern and method for patterning a layer using a photoresist SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-11-20 US disclosed
US-20040033445-A1 Method of forming a photoresist pattern and method for patterning a layer using a photoresist SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-02-19 US disclosed