SCHEMBL5404835

SCHEMBL5404835

CO[Si](CCC(CC[Si](OC)(OC)c1ccccc1)(CC[Si](OC)(OC)c1ccccc1)CC[Si](OC)(OC)c1ccccc1)(OC)c1ccccc1

nearest known ligand 0.31

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5425295 0.89
SCHEMBL5417619 0.87
SCHEMBL5419590 0.86 MAPK1 (0.30)
SCHEMBL5419948 0.85
SCHEMBL5410595 0.85
SCHEMBL645566 0.85 CA4 (0.36) CA4
SCHEMBL15405496 0.85 NR1H2 (0.33)
SCHEMBL5417332 0.85
SCHEMBL5410411 0.83 MAPK1 (0.32)
SCHEMBL5420241 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed