SCHEMBL5407938

SCHEMBL5407938

[O].[Si].[Zr]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5407933 1.00
Charcoal, Activated SCHEMBL8975658 0.87
Charcoal, Activated SCHEMBL8975650 0.87
SCHEMBL477827 0.82
SCHEMBL150462 0.82
SCHEMBL25366216 0.82
SCHEMBL189406 0.82
SCHEMBL9135753 0.82
SCHEMBL150461 0.82
SCHEMBL7976443 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0273264-B1 HYDRAULIC SOLICONE CRUMB WITH IMPROVED HEAT STABILITY DOW CORNING CORPORATION (US) 1992-12-23 EP claimed
EP-0273264-A2 Hydraulic solicone crumb with improved heat stability DOW CORNING CORPORATION (US) 1988-07-06 EP claimed
US-4722957-A ORGANOZIRCONIUM, HAFNIUM AND TITANIUM COMPONENTS FOR STABILITY DOW CORNING CORPORATION (US) 1988-02-02 US claimed
US-4122109-A Method for preparing a thermal-stability additive and a thermally stabilized methylpolysiloxane and compositions therefrom DOW CORNING CORPORATION (US) 1978-10-24 US claimed
US-7297368-B2 Method of making carbon fiber-carbon matrix reinforced ceramic composites ULTRAMET (US) 2007-11-20 US disclosed
US-7193281-B2 Semiconductor device and process for producing the same RENESAS TECHNOLOGY CORP. (JP) 2007-03-20 US disclosed
US-7064400-B2 Semiconductor device and process for producing the same RENESAS TECHNOLOGY CORP. (JP) 2006-06-20 US disclosed
US-20060081949-A1 Semiconductor device and process for producing the same RENESAS ELECTRONICS CORPORATION (JP) 2006-04-20 US disclosed
US-20050104141-A1 Semiconductor device and process for producing the same YUGAMI JIRO (JP) 2005-05-19 US disclosed
US-6833296-B2 Method of making a MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions RENESAS TECHNOLOGY CORP. (JP) 2004-12-21 US disclosed
US-20040207133-A1 Carbon-carbon reinforced melt infiltrated ceramic matrix composites ULTRAMET 2004-10-21 US disclosed
US-20040159889-A1 Semiconductor device and process for producing the same RENESAS ELECTRONICS CORPORATION (JP) 2004-08-19 US disclosed
US-6710383-B2 MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions RENESAS TECHNOLOGY CORPORATION (JP) 2004-03-23 US disclosed
US-20020072180-A1 Semiconductor device and process for producing the same RENESAS ELECTRONICS CORPORATION (JP) 2002-06-13 US disclosed
US-5795553-A Nitrogen oxide adsorbing material LOW EMMISSIONS TECHNOLOGIES RESEARCH AND DEVELOPMENT PARTNERSHIP (US) 1998-08-18 US disclosed
EP-0273264-B1 HYDRAULIC SOLICONE CRUMB WITH IMPROVED HEAT STABILITY DOW CORNING CORPORATION (US) 1992-12-23 EP disclosed
EP-0273264-A2 Hydraulic solicone crumb with improved heat stability DOW CORNING CORPORATION (US) 1988-07-06 EP disclosed
US-4722957-A ORGANOZIRCONIUM, HAFNIUM AND TITANIUM COMPONENTS FOR STABILITY DOW CORNING CORPORATION (US) 1988-02-02 US disclosed
US-4193885-A HEAT EXCHANGE FLUID STABILIZED WITH TITANIUM, ZIRCONIUM, OR HAFNIUM, OR COMPOUND THEREOF DOW CORNING CORPORATION (US) 1980-03-18 US disclosed
US-4122109-A Method for preparing a thermal-stability additive and a thermally stabilized methylpolysiloxane and compositions therefrom DOW CORNING CORPORATION (US) 1978-10-24 US disclosed