SCHEMBL5417641

SCHEMBL5417641

CO[Si](CCC[Si](OC)(OC)c1ccccc1)(CCC[Si](OC)(OC)c1ccccc1)CCC[Si](OC)(OC)c1ccccc1

nearest known ligand 0.30

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
CA12 O43570 1/20 0.30
CA1 P00915 1/20 0.30
CA2 P00918 1/20 0.30
CA4 P22748 1/20 0.30
CA7 P43166 1/20 0.30
CA9 Q16790 1/20 0.30
CA14 Q9ULX7 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5412939 0.96 CA12 (0.30) CA12CA1CA2CA4CA7
SCHEMBL5415252 0.94
SCHEMBL5413466 0.94
SCHEMBL647734 0.92 CA4 (0.33) CA4
SCHEMBL5420246 0.88 CA4 (0.32) CA12CA1CA2CA4CA7
SCHEMBL703491 0.88 CA4 (0.33) CA4
SCHEMBL5413042 0.86 CA4 (0.30) CA4
SCHEMBL30690856 0.86 CA4 (0.32) CA4
SCHEMBL30690858 0.86 CA4 (0.32) CA4
SCHEMBL5412456 0.85 MAPT (0.33) CA12CA1CA2CA4CA7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed