SCHEMBL5418129

SCHEMBL5418129

COC(OC)([SiH2]c1ccccc1)C(C(OC)(OC)[SiH2]c1ccccc1)C(OC)(OC)[SiH2]c1ccccc1

nearest known ligand 0.32

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.32
PDE4A P27815 1/20 0.31
PDE4B Q07343 1/20 0.31
PDE4C Q08493 1/20 0.31
PDE4D Q08499 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8849458 0.75 CA4 (0.36) CA4
SCHEMBL3063901 0.73 MAPK1 (0.36) CA4
SCHEMBL27836125 0.71 KCNN4 (0.33) CA4
SCHEMBL5406979 0.71 CA4 (0.33) CA4
SCHEMBL5423956 0.70 MAPK1 (0.33) CA4
SCHEMBL5415000 0.70 POLB (0.33) CA4
SCHEMBL5412949 0.70 CA4 (0.32) CA4
SCHEMBL5419654 0.68 CA4 (0.31) CA4
SCHEMBL6735662 0.67 MAPK1 (0.35) CA4
SCHEMBL16766900 0.67 TAAR1 (0.38)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed