SCHEMBL5458517

SCHEMBL5458517

C[SiH](C)O[Si](C)(O[SiH](C)C)O[Si](C)(O[SiH](C)C)O[SiH](C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18416016 0.87
SCHEMBL14826772 0.87
SCHEMBL133158 0.85
SCHEMBL6573256 0.84
SCHEMBL18719915 0.82
SCHEMBL20544711 0.81
SCHEMBL13232087 0.80
SCHEMBL8397041 0.78
SCHEMBL20451214 0.78
SCHEMBL5701719 0.76

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2796521-B1 Low-Temperature, Fast Curing Coating Composition and Cured Article SHINETSU CHEMICAL CO (JP) 2020-02-12 EP disclosed
US-9683131-B2 Low-temperature, fast curing coating composition and cured article SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-20 US disclosed
US-20140323653-A1 LOW-TEMPERATURE, FAST CURING COATING COMPOSITION AND CURED ARTICLE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-30 US disclosed
EP-2796521-A1 Low-Temperature, Fast Curing Coating Composition and Cured Article Shin-Etsu Chemical Co., Ltd. (JP) 2014-10-29 EP disclosed
US-20070178319-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. (JP) 2007-08-02 US disclosed
EP-1564269-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-17 EP disclosed
US-20040216641-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed
EP-0967216-B1 Method for manufacturing siloxane compounds DOW CORNING TORAY SILICONE (JP) 2004-04-21 EP disclosed
EP-0967216-A1 Method for manufacturing siloxane compounds Dow Corning Toray Silicone Company, Ltd. (JP) 1999-12-29 EP disclosed
US-5939507-A Method for manufacturing siloxane compounds DOW CORNING TORAY SILICONE CO., LTD. (JP) 1999-08-17 US disclosed