Fluoride Ion

Fluoride Ion

SCHEMBL552564

[F-].[F-].[F-].[F-].[H+].[H+].[H+].[H+]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride Ion SCHEMBL3084 1.00
Fluoride Ion SCHEMBL3038547 1.00
Fluoride Ion SCHEMBL5329992 1.00
Fluoride Ion SCHEMBL301950 1.00
Fluoride Ion SCHEMBL10979901 1.00
Bromide SCHEMBL9093768 0.82
Fluoride Ion SCHEMBL8089966 0.82
Fluoride Ion SCHEMBL6756047 0.82
Fluoride SCHEMBL3038548 0.82
Fluoride Ion SCHEMBL8933690 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115101420-A Manufacturing method of groove type power device 广州粤芯半导体技术有限公司 2022-09-23 CN claimed
CN-112897466-A Method for producing anhydrous hydrogen fluoride by using fluosilicic acid in phosphoric acid 贵州省化工研究院 2021-06-04 CN claimed
CN-112320821-A Method for producing high-purity potassium fluoride by using fluosilicic acid in phosphoric acid 贵州省化工研究院 2021-02-05 CN claimed
CN-112320820-A Method for producing high-purity sodium fluoride by utilizing fluosilicic acid in phosphoric acid 贵州省化工研究院 2021-02-05 CN claimed
US-8658490-B2 Passivating point defects in high-K gate dielectric layers during gate stack formation GLOBALFOUNDRIES INC. (KY) 2014-02-25 US claimed
US-20130267086-A1 PASSIVATING POINT DEFECTS IN HIGH-K GATE DIELECTRIC LAYERS DURING GATE STACK FORMATION GLOBALFOUNDRIES INC. (KY) 2013-10-10 US claimed
EP-0449892-A4 EXTRACTION AND PURIFICATION OF TITANIUM PRODUCTS FROM TITANIUM BEARING MINERALS 1992-06-03 EP claimed
EP-0449892-A1 EXTRACTION AND PURIFICATION OF TITANIUM PRODUCTS FROM TITANIUM BEARING MINERALS. UNIV MELBOURNE (AU) 1991-10-09 EP claimed
WO-1990006898-A1 EXTRACTION AND PURIFICATION OF TITANIUM PRODUCTS FROM TITANIUM BEARING MINERALS THE UNIVERSITY OF MELBOURNE (AU) 1990-06-28 WO claimed
JP-63154945-A None JP disclosed
CN-117509548-B Method for preparing hydrofluoric acid and co-producing white carbon black by fluosilicic acid 云南氟磷电子科技有限公司 2024-07-05 CN disclosed
CN-220851755-U Place stable steel lining tetrafluoro storage tank 江苏亚氟隆防腐科技有限公司 2024-04-26 CN disclosed
CN-113066834-B Display device, display panel and manufacturing method thereof 合肥鑫晟光电科技有限公司 2024-03-26 CN disclosed
CN-117509548-A Method for preparing hydrofluoric acid and co-producing white carbon black by fluosilicic acid 云南氟磷电子科技有限公司 2024-02-06 CN disclosed
US-20100073613-A1 LIQUID CRYSTAL DISPLAY PANEL, LIQUID CRYSTAL DISPLAY UNIT, LIQUID CRYSTAL DISPLAY DEVICE, TELEVISION RECEIVER, AND METHOD FOR MANUFACTURING COLOR FILTER SUBSTRATE SHARP KABUSHIKI KAISHA (JP) 2010-03-25 US disclosed
US-20090057682-A1 ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, TELEVISION RECEIVER, MANUFACTURING METHOD OF ACTIVE MATRIX SUBSTRATE, FORMING METHOD OF GATE INSULATING FILM SHARP KABUSHIKI KAISHA (JP) 2009-03-05 US disclosed
CN-1565710-A Apparatus and method for point-of-use treatment of effluent gas streams ADVANCED TECH MATERIALS (US) 2005-01-19 CN disclosed
CN-1367713-A Apparatus and method for on-site treatment of an exhaust gas stream ADVANCED TECH MATERIALS (US) 2002-09-04 CN disclosed
US-5672325-A Method for the oxidation treatment of decaborane gas JAPAN ATOMIC ENERGY RESEARCH INSTITUTE (JP) 1997-09-30 US disclosed
JP-S63154945-A ANALYSIS OF GLASS SEIKO EPSON CORP 1988-06-28 JP disclosed