SCHEMBL555133

SCHEMBL555133

[AlH3].[Ir]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27773991 1.00
SCHEMBL27092127 0.82
SCHEMBL27543014 0.82
SCHEMBL27866660 0.82
SCHEMBL5067799 0.82
SCHEMBL27540963 0.82
SCHEMBL28138642 0.82
SCHEMBL27502792 0.82
SCHEMBL21381152 0.82
SCHEMBL107071 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 101 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12512137-B2 Multilayered vertical spin-orbit torque devices SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-12-30 US claimed
EP-4404724-B1 MULTILAYERED SPIN-ORBIT TORQUE DEVICE AND MANUFACTURING METHOD THEREOF SAMSUNG ELECTRONICS CO LTD (KR) 2025-04-16 EP claimed
US-12274179-B2 Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler films INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2025-04-08 US claimed
US-12154603-B1 Spin-orbit torque (SOT) writer with topological insulator materials WESTERN DIGITAL TECHNOLOGIES, INC. (US) 2024-11-26 US claimed
CN-118405845-A Preparation method of fluorescent glass for photoelectric device encapsulation based on sol-gel method 厦门理工学院 2024-07-30 CN claimed
US-20240249759-A1 MULTILAYERED VERTICAL SPIN-ORBIT TORQUE DEVICES SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-07-25 US claimed
EP-4404724-A1 MULTILAYERED VERTICAL SPIN-ORBIT TORQUE DEVICES Samsung Electronics Co., Ltd. (KR) 2024-07-24 EP claimed
CN-118382347-A Magnetic memory device, method of manufacturing magnetic memory device, and method of programming magnetic memory device 三星电子株式会社 2024-07-23 CN claimed
US-20230413681-A1 SEED LAYER FOR ENHANCING TUNNEL MAGNETORESISTANCE WITH PERPENDICULARLY MAGNETIZED HEUSLER FILMS INTERNATIONAL BUSINESS MACHINES CORPORATION 2023-12-21 US claimed
EP-4294150-A1 SEED LAYER FOR ENHANCING TUNNEL MAGNETORESISTANCE WITH PERPENDICULARLY MAGNETIZED HEUSLER FILMS Samsung Electronics Co., Ltd. (KR) 2023-12-20 EP claimed
US-20180287037-A1 LAMINATE AND THERMOELECTRIC CONVERSION ELEMENT TDK CORPORATION (JP) 2018-10-04 US claimed
CN-108383943-A Norborneol alkenes ternary polymerization catalyst and three copolymerization process 宁波工程学院 2018-08-10 CN claimed
CN-105693929-B Norborneol alkenes, styrene and vinylacetate ternary polymerization catalyst and method for ternary polymerization 宁波工程学院 2018-06-19 CN claimed
CN-105693929-A Norbornene, styrene and nikasol ternary polymerization catalyst and ternary polymerization method 宁波工程学院 2016-06-22 CN claimed
US-9184570-B2 Spark plug for internal combustion engine of motor vehicles DENSO CORPORATION (JP) 2015-11-10 US claimed
US-20120048360-A1 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-03-01 US claimed
EP-2423967-A2 Solar cell and method of manufacturing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-02-29 EP claimed
CN-101643902-A Preparation method of iridium-aluminum high temperature oxidation resistance coating KUNMING INST OF PRECIOUS METAL 2010-02-10 CN claimed
CN-101497998-A Preparation of iridium aluminum high temperature oxidation coating KUNMING INST OF PRECIOUS METAL (CN) 2009-08-05 CN claimed
US-6630250-B1 Article having an iridium-aluminum protective coating, and its preparation GENERAL ELECTRIC CO. 2003-10-07 US claimed