⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1321587 | 0.89 | — | — | |
| SCHEMBL28444303 | 0.89 | — | — | |
| SCHEMBL2481 | 0.87 | — | — | |
| SCHEMBL8858870 | 0.87 | — | — | |
| SCHEMBL23629103 | 0.75 | — | — | |
| SCHEMBL12478870 | 0.75 | — | — | |
| SCHEMBL15524775 | 0.75 | — | — | |
| Hydrochloric Acid SCHEMBL6936982 | 0.75 | — | — | |
| SCHEMBL1521222 | 0.75 | — | — | |
| Hydrochloric Acid SCHEMBL124561 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7002176-B2 | Vertical organic transistor | RICOH COMPANY, LTD. (JP) | 2006-02-21 | — | — | US | claimed |
| US-20040004215-A1 | Vertical organic transistor | RICOH COMPANY, LTD. (JP) | 2004-01-08 | — | — | US | claimed |
| US-20250294784-A1 | CAPACITOR, MEMORY DEVICE INCLUDING THE CAPACITOR, AND METHOD OF MANUFACTURING THE CAPACITOR | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-09-18 | — | — | US | disclosed |
| US-12356643-B2 | Capacitor, memory device including the capacitor | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-07-08 | — | — | US | disclosed |
| CN-118919128-A | High-stability metal nanowire transparent conductive film and electronic device | 四川大学 | 2024-11-08 | — | — | CN | disclosed |
| US-11749713-B2 | Capacitor including perovskite material, semiconductor device including the capacitor, and method of manufacturing the capacitor | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-09-05 | — | — | US | disclosed |
| US-11749714-B2 | Capacitor including perovskite material, semiconductor device including the capacitor, and method of manufacturing the capacitor | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-09-05 | — | — | US | disclosed |
| US-20230102906-A1 | CAPACITOR, MEMORY DEVICE INCLUDING THE CAPACITOR, AND METHOD OF MANUFACTURING THE CAPACITOR | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-03-30 | — | — | US | disclosed |
| CN-113816422-B | Metal vanadate nanocomposite, preparation method thereof and lithium ion secondary battery | 四川大学 | 2022-11-22 | — | — | CN | disclosed |
| US-20220328616-A1 | CAPACITOR INCLUDING PEROVSKITE MATERIAL, SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR, AND METHOD OF MANUFACTURING THE CAPACITOR | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2022-10-13 | — | — | US | disclosed |
| US-20220328615-A1 | CAPACITOR INCLUDING PEROVSKITE MATERIAL, SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR, AND METHOD OF MANUFACTURING THE CAPACITOR | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2022-10-13 | — | — | US | disclosed |
| US-7002176-B2 | Vertical organic transistor | RICOH COMPANY, LTD. (JP) | 2006-02-21 | — | — | US | disclosed |
| US-20040004215-A1 | Vertical organic transistor | RICOH COMPANY, LTD. (JP) | 2004-01-08 | — | — | US | disclosed |
| EP-0749162-B1 | Vertical MISFET devices, CMOS process integration, RAM applications | IMEC INTER UNI MICRO ELECTR (BE) | 2003-09-03 | — | — | EP | disclosed |
| WO-2002009126-A2 | SPIN VALVE STRUCTURE | MOTOROLA, INC. (US) | 2002-01-31 | — | — | WO | disclosed |
| US-6207977-B1 | Vertical MISFET devices | INTERUNIVERSITAIRE MICROELEKTRONICA (BE) | 2001-03-27 | — | — | US | disclosed |
| US-5963800-A | CMOS integration process having vertical channel | INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM (IMEC VZW) (BE) | 1999-10-05 | — | — | US | disclosed |
| US-5920088-A | Vertical MISFET devices | INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM (IMEC VZW) (BE) | 1999-07-06 | — | — | US | disclosed |
| US-5914504-A | DRAM applications using vertical MISFET devices | IMEC VZW (BE) | 1999-06-22 | — | — | US | disclosed |
| EP-0749162-A2 | Vertical MISFET devices, CMOS process integration, RAM applications | INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW (BE) | 1996-12-18 | — | — | EP | disclosed |