⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10630167 | 0.71 | — | — | |
| SCHEMBL8148453 | 0.69 | — | — | |
| SCHEMBL7471349 | 0.67 | — | — | |
| SCHEMBL2357759 | 0.65 | — | — | |
| SCHEMBL10633379 | 0.65 | — | — | |
| SCHEMBL3483652 | 0.65 | — | — | |
| SCHEMBL7589090 | 0.65 | — | — | |
| SCHEMBL9229541 | 0.65 | — | — | |
| SCHEMBL6343866 | 0.65 | — | — | |
| SCHEMBL6919612 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20220005705-A1 | METHODS AND APPARATUS FOR METAL SILICIDE DEPOSITION | APPLIED MATERIALS, INC. | 2022-01-06 | — | — | US | claimed |
| EP-1778891-A1 | DIVIDED SOLID COMPOSITION COMPOSED OF GRAINS PROVIDED WITH CONTINUOUS METAL DEPOSITION, METHOD FOR THE PRODUCTION AND USE THEREOF IN THE FORM OF A CATALYST | Institut National Polytechnique de Toulouse (I.N.P.T) (FR) | 2007-05-02 | — | — | EP | claimed |
| WO-2006008384-A1 | DIVIDED SOLID COMPOSITION COMPOSED OF GRAINS PROVIDED WITH CONTINUOUS METAL DEPOSITION, METHOD FOR THE PRODUCTION AND USE THEREOF IN THE FORM OF A CATALYST | INSTITUT NATIONAL POLYTECHNIQUE DE TOULOUSE (FR) | 2006-01-26 | — | — | WO | claimed |
| US-20260047479-A1 | PACKAGE AND METHOD OF FORMING A PACKAGE | INFINEON TECHNOLOGIES AG (DE) | 2026-02-12 | — | — | US | disclosed |
| US-20260021473-A1 | THIOL-FUNCTIONALIZED ADSORBENTS FOR HEAVY METAL ION REMOVAL | UCHICAGO ARGONNE, LLC (US) | 2026-01-22 | — | — | US | disclosed |
| US-11615986-B2 | Methods and apparatus for metal silicide deposition | APPLIED MATERIALS, INC. (US) | 2023-03-28 | — | — | US | disclosed |
| US-20220005704-A1 | METHODS AND APPARATUS FOR METAL SILICIDE DEPOSITION | APPLIED MATERIALS, INC. | 2022-01-06 | — | — | US | disclosed |
| US-20220005705-A1 | METHODS AND APPARATUS FOR METAL SILICIDE DEPOSITION | APPLIED MATERIALS, INC. | 2022-01-06 | — | — | US | disclosed |
| US-11152221-B2 | Methods and apparatus for metal silicide deposition | APPLIED MATERIALS, INC. (US) | 2021-10-19 | — | — | US | disclosed |
| US-20200266068-A1 | METHODS AND APPARATUS FOR METAL SILICIDE DEPOSITION | APPLIED MATERIALS, INC. | 2020-08-20 | — | — | US | disclosed |
| US-10700006-B2 | Manufacturing method of nickel wiring | TOKYO ELECTRON LIMITED (JP) | 2020-06-30 | — | — | US | disclosed |
| US-20180090446-A1 | MANUFACTURING METHOD OF NICKEL WIRING | TOKYO ELECTRON LIMITED (JP) | 2018-03-29 | — | — | US | disclosed |
| US-9287290-B1 | 3D memory having crystalline silicon NAND string channel | SANDISK TECHNOLOGIES INC. (US) | 2016-03-15 | — | — | US | disclosed |
| US-20070161213-A1 | Semiconductor device and method of manufacturing the same | NEC CORPORATION (JP) | 2007-07-12 | — | — | US | disclosed |
| EP-1778891-A1 | DIVIDED SOLID COMPOSITION COMPOSED OF GRAINS PROVIDED WITH CONTINUOUS METAL DEPOSITION, METHOD FOR THE PRODUCTION AND USE THEREOF IN THE FORM OF A CATALYST | Institut National Polytechnique de Toulouse (I.N.P.T) (FR) | 2007-05-02 | — | — | EP | disclosed |
| WO-2006008384-A1 | DIVIDED SOLID COMPOSITION COMPOSED OF GRAINS PROVIDED WITH CONTINUOUS METAL DEPOSITION, METHOD FOR THE PRODUCTION AND USE THEREOF IN THE FORM OF A CATALYST | INSTITUT NATIONAL POLYTECHNIQUE DE TOULOUSE (FR) | 2006-01-26 | — | — | WO | disclosed |
| US-6974763-B1 | Method of forming semiconductor device by crystallizing amorphous silicon and forming crystallization promoting material in the same chamber | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2005-12-13 | — | — | US | disclosed |
| US-6156627-A | Method of promoting crystallization of an amorphous semiconductor film using organic metal CVD | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2000-12-05 | — | — | US | disclosed |