Tetrapropylammonium

Tetrapropylammonium

SCHEMBL5574366

CCC[N+](CCC)(CCC)CCC.CCC[N+](CCC)(CCC)CCC.O=S([O-])[O-]

nearest known ligand 0.62

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Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
SLC22A1 O15245 4/20 0.62
SLC22A2 O15244 1/20 0.40
LSS P48449 1/20 0.38
ALDH1A1 P00352 1/20 0.36
TP53 P04637 1/20 0.36
CYP3A4 P08684 1/20 0.36
ALOX15 P16050 1/20 0.36
TSHR P16473 1/20 0.36
ALOX12 P18054 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
HIF1A Q16665 1/20 0.36
HSD17B10 Q99714 1/20 0.36
DNM1 Q05193 4/20 0.33
EPHX2 P34913 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetrapropylammonium SCHEMBL7637997 0.97 SLC22A1 (0.59) SLC22A1SLC22A2LSSALDH1A1TP53
Tetrapropylammonium SCHEMBL7637999 0.88 SLC22A1 (0.56) SLC22A1SLC22A2LSSALDH1A1TP53
Tetrabuthylammonium SCHEMBL1073228 0.82 SLC22A1 (0.67) SLC22A1SLC22A2LSSALDH1A1TP53
Tetrapropylammonium SCHEMBL6686604 0.81 SLC22A1 (0.62) SLC22A1SLC22A2LSSALDH1A1TP53
Tetrabuthylammonium SCHEMBL3795428 0.80 SLC22A1 (0.63) SLC22A1SLC22A2LSSALDH1A1TP53
Tetrahexylammonium SCHEMBL11853414 0.80 SLC22A1 (0.68) SLC22A1SLC22A2LSSALDH1A1TP53
Tetrapropylammonium SCHEMBL2864463 0.79 SLC22A1 (0.83) SLC22A1SLC22A2LSSALDH1A1TP53
Tetrapropylammonium SCHEMBL5490456 0.79 SLC22A1 (1.00) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrapropylammonium SCHEMBL59838 0.79 SLC22A1 (1.00) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Sulfurous Acid SCHEMBL7641025 0.78 SLC22A1 (0.65) SLC22A1SLC22A2LSSALDH1A1TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed