⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL525341 | 1.00 | — | — | |
| SCHEMBL31400316 | 0.82 | — | — | |
| SCHEMBL10719522 | 0.82 | — | — | |
| SCHEMBL29664043 | 0.82 | — | — | |
| SCHEMBL1050852 | 0.82 | — | — | |
| Arsenic SCHEMBL7549108 | 0.82 | — | — | |
| SCHEMBL11414871 | 0.82 | — | — | |
| SCHEMBL734184 | 0.82 | — | — | |
| SCHEMBL399427 | 0.82 | — | — | |
| SCHEMBL6770200 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1313 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3584821-B1 | COMPOUND SEMICONDUCTOR LAMINATE SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR ELEMENT | SHINETSU CHEMICAL CO (JP) | 2025-03-12 | — | — | EP | claimed |
| CN-119307097-A | Vibration reduction, buffering, sound absorption and noise reduction flexible composite material, preparation method thereof, loudspeaker and electronic equipment | 镇江贝斯特新材料股份有限公司 | 2025-01-14 | — | — | CN | claimed |
| US-20240327705-A1 | ZINC-DOPED QUANTUM DOT AND MANUFACTURING METHOD THEREFOR | Research & Business Foundation Sungkyunkwan University (KR) | 2024-10-03 | — | — | US | claimed |
| EP-3855628-B1 | ELECTRONIC DEVICE FOR PROCESSING RADIO SIGNAL AND OPERATING METHOD THEREOF | SAMSUNG ELECTRONICS CO LTD (KR) | 2024-03-06 | — | — | EP | claimed |
| US-20240012177-A1 | Self-Aligned Nano-Pillar Coatings and Method of Manufacturing | Metalenz, Inc. (US) | 2024-01-11 | — | — | US | claimed |
| US-11840654-B2 | Quantum dot and preparing method of the same | Research & Business Foundation Sungkyunkwan University (KR) | 2023-12-12 | — | — | US | claimed |
| CN-117138841-A | Nano spherical porous porphyrin copper and preparation method and application thereof | 江苏大学 | 2023-12-01 | — | — | CN | claimed |
| EP-4275080-A1 | SELF-ALIGNED NANO-PILLAR COATINGS AND METHOD OF MANUFACTURING | Metalenz, Inc. (US) | 2023-11-15 | — | — | EP | claimed |
| CN-116504886-A | Flexible photoelectric device and preparation method thereof | 山东省科学院激光研究所 | 2023-07-28 | — | — | CN | claimed |
| WO-2023113353-A1 | ZINC-DOPED QUANTUM DOT AND MANUFACTURING METHOD THEREFOR | 성균관대학교산학협력단 | 2023-06-22 | — | — | WO | claimed |
| US-20040124428-A1 | Light emitting diode and method of making the same | UNITED EPITAXY CO., LTD. | 2004-07-01 | — | — | US | claimed |
| CN-1155099-C | Field effect transistor | ���µ�����ҵ��ʽ���� | 2004-06-23 | — | — | CN | claimed |
| US-6653212-B1 | Method and apparatus for thin-film deposition, and method of manufacturing thin-film semiconductor device | SONY CORPORATION (JP) | 2003-11-25 | — | — | US | claimed |
| CN-1453840-A | Prepn of P-type zinc oxide film | UNIV SHANDONG (CN) | 2003-11-05 | — | — | CN | claimed |
| US-6593597-B2 | Group III-V element-based LED having ESD protection capacity | SOUTH EPITAXY CORPORATION (TW) | 2003-07-15 | — | — | US | claimed |
| US-6559482-B1 | III-N compound semiconductor bipolar transistor structure and method of manufacture | SOUTH EPITAXY CORPORATION (TW) | 2003-05-06 | — | — | US | claimed |
| US-20030067686-A1 | Diffractive optical element and optical head using the same | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2003-04-10 | — | — | US | claimed |
| US-20020179914-A1 | Group III-V element-based LED having flip-chip structure and ESD protection capacity | EPISTAR CORPORATION (TW) | 2002-12-05 | — | — | US | claimed |
| CN-1193820-A | Epitaxial wafer and manufacturing method thereof well as light-emitting diode with enhanced luminance | HITACHI CABLE (JP) | 1998-09-23 | — | — | CN | claimed |
| CN-1192587-A | Field effect transistor | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 1998-09-09 | — | — | CN | claimed |