⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14742711 | 0.82 | — | — | |
| SCHEMBL28882922 | 0.71 | — | — | |
| SCHEMBL9301898 | 0.71 | — | — | |
| SCHEMBL29421166 | 0.71 | — | — | |
| Hydrogen Sulfide SCHEMBL20603104 | 0.71 | — | — | |
| SCHEMBL30690814 | 0.71 | — | — | |
| SCHEMBL9303057 | 0.71 | — | — | |
| Selenium SCHEMBL7732281 | 0.71 | — | — | |
| SCHEMBL14829129 | 0.71 | — | — | |
| SCHEMBL10575591 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 46 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10159420-B2 | Nerve impulse signal stimulation device and method for fabricating the same | NATIONAL CHIAO TUNG UNIVERSITY (TW) | 2018-12-25 | — | — | US | claimed |
| US-9968999-B2 | Boron doped manganese antimonide as a useful permanent magnet material | COUNCIL OF SCIENTIFIC & INDUSTRIAL RESEARCH (IN) | 2018-05-15 | — | — | US | claimed |
| US-20170245771-A1 | NERVE IMPULSE SIGNAL STIMULATION DEVICE AND METHOD FOR FABRICATING THE SAME | NATIONAL CHIAO TUNG UNIVERSITY (TW) | 2017-08-31 | — | — | US | claimed |
| US-20150110662-A1 | BORON DOPED MANGANESE ANTIMONIDE AS A USEFUL PERMANENT MAGNET MATERIAL | COUNCIL OF SCIENTIFIC & INDUSTRIAL RESEARCH (IN) | 2015-04-23 | — | — | US | claimed |
| US-20250316599-A1 | PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-10-09 | — | — | US | disclosed |
| CN-116426848-B | Antimony magnesium calcium composite processed cutting tool steel and preparation method thereof | 本钢板材股份有限公司 | 2024-11-12 | — | — | CN | disclosed |
| CN-116426848-B | Antimony magnesium calcium composite processed cutting tool steel and preparation method thereof | 本钢板材股份有限公司 | 2024-11-12 | — | — | CN | disclosed |
| US-12051455-B2 | Variable resistance memory device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-07-30 | — | — | US | disclosed |
| US-11753423-B2 | Method for producing herbicide intermediate | MMAG Co. Ltd (JP) | 2023-09-12 | — | — | US | disclosed |
| CN-116426848-A | Antimony magnesium calcium composite processed cutting tool steel and preparation method thereof | 本钢板材股份有限公司 | 2023-07-14 | — | — | CN | disclosed |
| CN-116426848-A | Antimony magnesium calcium composite processed cutting tool steel and preparation method thereof | 本钢板材股份有限公司 | 2023-07-14 | — | — | CN | disclosed |
| US-20230114539-A1 | VARIABLE RESISTANCE MEMORY DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-04-13 | — | — | US | disclosed |
| US-20150110662-A1 | BORON DOPED MANGANESE ANTIMONIDE AS A USEFUL PERMANENT MAGNET MATERIAL | COUNCIL OF SCIENTIFIC & INDUSTRIAL RESEARCH (IN) | 2015-04-23 | — | — | US | disclosed |
| US-20150110662-A1 | BORON DOPED MANGANESE ANTIMONIDE AS A USEFUL PERMANENT MAGNET MATERIAL | COUNCIL OF SCIENTIFIC & INDUSTRIAL RESEARCH (IN) | 2015-04-23 | — | — | US | disclosed |
| US-20150110662-A1 | BORON DOPED MANGANESE ANTIMONIDE AS A USEFUL PERMANENT MAGNET MATERIAL | COUNCIL OF SCIENTIFIC & INDUSTRIAL RESEARCH (IN) | 2015-04-23 | — | — | US | disclosed |
| US-20120175581-A1 | SWITCHING DEVICE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME | HYNIX SEMICONDUCTOR INC. (KR) | 2012-07-12 | — | — | US | disclosed |
| US-8083962-B2 | Method for forming minute pattern and method for forming semiconductor memory device using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-12-27 | — | — | US | disclosed |
| US-20070238031-A1 | Method for forming minute pattern and method for forming semiconductor memory device using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-10-11 | — | — | US | disclosed |
| US-20070221888-A1 | LIGHT EMITTING MATERIAL, LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2007-09-27 | — | — | US | disclosed |
| WO-2007099880-A1 | LIGHT EMITTING MATERIAL, LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2007-09-07 | — | — | WO | disclosed |