⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14892575 | 1.00 | — | — | |
| Bicarbonate SCHEMBL20423785 | 0.89 | — | — | |
| SCHEMBL13679421 | 0.77 | — | — | |
| SCHEMBL29435158 | 0.73 | — | — | |
| SCHEMBL2874272 | 0.66 | — | — | |
| SCHEMBL32998 | 0.65 | — | — | |
| Bicarbonate SCHEMBL20423840 | 0.63 | ABAT (0.30) | — | |
| SCHEMBL333961 | 0.62 | — | — | |
| SCHEMBL726780 | 0.62 | — | — | |
| SCHEMBL16162693 | 0.62 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1758942-A1 | METHODS FOR SEPARATING SLURRY COMPONENTS | ExxonMobil Chemical Patents Inc. (US) | 2007-03-07 | — | — | EP | claimed |
| WO-2006009550-A1 | METHODS FOR SEPARARING SLURRY COMPONENTS | EXXONMOBIL CHEMICAL PATENTS INC. (US) | 2006-01-26 | — | — | WO | claimed |
| US-20240018075-A1 | METHOD FOR STORING FLUOROBUTENE | RESONAC CORPORATION (JP) | 2024-01-18 | — | — | US | disclosed |
| US-20230386851-A1 | ETCHING GAS, ETCHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | RESONAC CORPORATION (JP) | 2023-11-30 | — | — | US | disclosed |
| US-20230386850-A1 | ETCHING GAS, ETCHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | RESONAC CORPORATION (JP) | 2023-11-30 | — | — | US | disclosed |
| US-20230386853-A1 | ETCHING GAS, METHOD FOR PRODUCING SAME, ETCHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | RESONAC CORPORATION (JP) | 2023-11-30 | — | — | US | disclosed |
| US-20230374381-A1 | ETCHING GAS, METHOD FOR PRODUCING SAME, ETCHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | RESONAC CORPORATION (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230373887-A1 | METHOD FOR STORING FLUOROBUTENE | RESONAC CORPORATION (JP) | 2023-11-23 | — | — | US | disclosed |
| EP-4230606-A1 | FLUOROBUTENE STORAGE METHOD | Resonac Corporation (JP) | 2023-08-23 | — | — | EP | disclosed |
| EP-4230605-A1 | METHOD FOR STORING FLUOROBUTENE | Resonac Corporation (JP) | 2023-08-23 | — | — | EP | disclosed |
| WO-2022080271-A1 | ETCHING GAS, METHOD FOR PRODUCING SAME, ETCHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT | 昭和電工株式会社 | 2022-04-21 | — | — | WO | disclosed |
| WO-2020124212-A1 | PROCESS FOR THE PRODUCTION OF ISOOLEFIN POLYMERS USING A TERTIARY ETHER | ARLANXEO Canada Inc. (CA) | 2020-06-25 | — | — | WO | disclosed |
| CN-106233436-B | Method for increasing etching rate of silicon etching process by etching chamber pretreatment | 国际商业机器公司 | 2020-01-07 | — | — | CN | disclosed |
| US-9711365-B2 | Etch rate enhancement for a silicon etch process through etch chamber pretreatment | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2017-07-18 | — | — | US | disclosed |
| CN-106233436-A | The method being improved the etch-rate of silicon etch process by etched cavity pretreatment | 国际商业机器公司 | 2016-12-14 | — | — | CN | disclosed |
| US-20150318182-A1 | ETCH RATE ENHANCEMENT FOR A SILICON ETCH PROCESS THROUH ETCH CHAMBER PRETREATMENT | ZEON CORPORATION (JP) | 2015-11-05 | — | — | US | disclosed |
| US-8928124-B2 | High aspect ratio and reduced undercut trench etch process for a semiconductor substrate | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2015-01-06 | — | — | US | disclosed |
| US-8652969-B2 | High aspect ratio and reduced undercut trench etch process for a semiconductor substrate | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-02-18 | — | — | US | disclosed |
| US-20130328173-A1 | HIGH ASPECT RATIO AND REDUCED UNDERCUT TRENCH ETCH PROCESS FOR A SEMICONDUCTOR SUBSTRATE | ZEON CORPORATION (JP) | 2013-12-12 | — | — | US | disclosed |
| US-20130105947-A1 | HIGH ASPECT RATIO AND REDUCED UNDERCUT TRENCH ETCH PROCESS FOR A SEMICONDUCTOR SUBSTRATE | ZEON CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |