Fluoride Ion

Fluoride Ion

SCHEMBL561455

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nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride Ion SCHEMBL3679384 1.00
Water SCHEMBL11319955 0.82
SCHEMBL27427293 0.71
Magnesium SCHEMBL29644749 0.71
SCHEMBL29375890 0.71
SCHEMBL8008129 0.71
SCHEMBL29355775 0.71
Fluoride Ion SCHEMBL22981870 0.50
Fluoride Ion SCHEMBL4621059 0.50
Silver SCHEMBL8153460 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1192 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12522546-B2 Method for producing fluoroethylene DAIKIN INDUSTRIES, LTD. (JP) 2026-01-13 US claimed
US-20250313497-A1 High Protein Organic Materials as Fuel and Processes for Making the Same AKBEV GROUP, LLC (US) 2025-10-09 US claimed
US-20250308919-A1 SIMULTANEOUS DIELECTRIC ETCH WITH METAL PASSIVATION LAM RESEARCH CORPORATION 2025-10-02 US claimed
US-20250305133-A1 METHOD, SYSTEM AND APPARATUS FOR N-METAL FILM DEPOSITION ASM IP HOLDING B.V. (NL) 2025-10-02 US claimed
US-12378492-B2 High protein organic materials as fuel and processes for making the same AKBEV GROUP, LLC (US) 2025-08-05 US claimed
US-20250215565-A1 VANADIUM CONTAINING LAYERS AND METHODS AND SYSTEMS FOR DEPOSITING SAID LAYERS ASM IP HOLDING B.V. (NL) 2025-07-03 US claimed
US-20250183054-A1 SELECTIVE BOTTOM-UP FILL ASM IP HOLDING B.V. (NL) 2025-06-05 US claimed
CN-120072744-A Selective bottom-up filling ASM IP私人控股有限公司 2025-05-30 CN claimed
CN-119774559-A Preparation method of titanium nitride film, titanium nitride film and semiconductor structure 武汉楚兴技术有限公司 2025-04-08 CN claimed
CN-119725474-A Carbon-coated Na3V2(PO4)2F3Preparation method of sodium ion battery anode material 深圳大学 2025-03-28 CN claimed
EP-0166216-B1 METHOD OF FORMING A NITRIDE LAYER KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO (JP) 1989-01-25 EP claimed
EP-0161684-B1 METHOD OF FORMING A CARBIDE LAYER KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO (JP) 1988-11-02 EP claimed
US-4686117-A Method of forming a carbide layer KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO (JP) 1987-08-11 US claimed
US-4569862-A Method of forming a nitride layer KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO (JP) 1986-02-11 US claimed
EP-0166216-A2 Method of forming a nitride layer KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO (JP) 1986-01-02 EP claimed
EP-0161684-A1 Method of forming a carbide layer KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO (JP) 1985-11-21 EP claimed
US-4417055-A Process for producing a β-trifluoromethylpyridine ISHIHARA SANGYO KAISHA LTD. (JP) 1983-11-22 US claimed
US-4235608-A COCONUT FIBERS ABC TRADING CO., LTD. (JP) 1980-11-25 US claimed
US-4029556-A ELECTRODEPOSITION OF ALLOY MONACO EMLEE 1977-06-14 US claimed
US-3936396-A ZINC OXIDE, BISMUTH OXIDE AND ALUMINUM, BERYLLIUM, CERIUM, NICKEL OR VANADIUM FLUORIDE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JA) 1976-02-03 US claimed