SCHEMBL563850

SCHEMBL563850

O=C(O)C(=Cc1ccccc1)C(C(F)(F)F)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
AKR1C3 P42330 1/20 0.48
AKR1C1 Q04828 1/20 0.47
CYP2C9 P11712 2/20 0.43
CYP3A4 P08684 1/20 0.43
TP53 P04637 1/20 0.41
HTT P42858 1/20 0.41
ALDH1A1 P00352 3/20 0.39
TSHR P16473 1/20 0.39
TRPM8 Q7Z2W7 1/20 0.39
LMNA P02545 2/20 0.38
MAPT P10636 2/20 0.38
S1PR4 O95977 1/20 0.38
S1PR1 P21453 1/20 0.38
NPSR1 Q6W5P4 1/20 0.38
RECQL P46063 2/20 0.38
MCL1 Q07820 1/20 0.38
MEN1 O00255 1/20 0.38
KMT2A Q03164 1/20 0.38
CYP1A1 P04798 1/20 0.38
MAOB P27338 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL564118 0.86 AKR1C3 (0.50) AKR1C3AKR1C1CYP2C9CYP3A4TP53
SCHEMBL7146881 0.86 AKR1C3 (0.50) AKR1C3AKR1C1CYP2C9CYP3A4TP53
SCHEMBL8054477 0.86 AKR1C3 (0.50) AKR1C3AKR1C1CYP2C9CYP3A4TP53
Hydrochloric Acid SCHEMBL6510831 0.84 AKR1C3 (0.48) AKR1C3AKR1C1CYP2C9CYP3A4TP53
SCHEMBL559775 0.79 AKR1C3 (0.44) AKR1C3AKR1C1CYP2C9CYP3A4TP53
SCHEMBL225383 0.79 AKR1C3 (0.57) AKR1C3AKR1C1CYP2C9CYP3A4TP53
SCHEMBL10719619 0.78 AKR1C3 (0.50) AKR1C3AKR1C1CYP2C9CYP3A4TP53
SCHEMBL1805525 0.78 AKR1C3 (0.50) AKR1C3AKR1C1CYP2C9CYP3A4TP53
SCHEMBL525211 0.78 AKR1C3 (0.55) AKR1C3AKR1C1CYP2C9CYP3A4TP53
SCHEMBL525210 0.78 AKR1C3 (0.55) AKR1C3AKR1C1CYP2C9CYP3A4TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8609318-B2 Radiation-sensitive resin composition, method for forming resist pattern and polymer JSR CORPORATION (JP) 2013-12-17 US disclosed
US-20120034560-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND POLYMER JSR CORPORATION (JP) 2012-02-09 US disclosed