⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30070289 | 1.00 | — | — | |
| Lithium SCHEMBL31094279 | 0.82 | — | — | |
| SCHEMBL29389425 | 0.71 | — | — | |
| SCHEMBL14578999 | 0.71 | — | — | |
| SCHEMBL29682491 | 0.71 | — | — | |
| SCHEMBL29369415 | 0.71 | — | — | |
| SCHEMBL29491006 | 0.71 | — | — | |
| SCHEMBL19313 | 0.71 | — | — | |
| SCHEMBL4853547 | 0.71 | — | — | |
| SCHEMBL29483314 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-107955027-B | Multiple tooth nitrogen oxygen tertiary amine ligand Ga, In complex and its preparation method and application | 齐齐哈尔大学 | 2019-11-22 | — | — | CN | disclosed |
| CN-107955027-A | Multiple tooth nitrogen oxygen tertiary amine ligand Ga, In complex and its preparation method and application | 齐齐哈尔大学 | 2018-04-24 | — | — | CN | disclosed |
| CN-104350179-B | Method for the preparation layer containing Indium sesquioxide. | 赢创德固赛有限公司 | 2016-12-07 | — | — | CN | disclosed |
| CN-102652187-B | Method for producing a layer containing indium oxide, indium oxide-containing layer produced by said method and use thereof | EVONIK DEGUSSA GMBH (DE) | 2016-03-30 | — | — | CN | disclosed |
| CN-102652137-B | Prepare the method for indium chlorine two alkoxide | EVONIK DEGUSSA GMBH (DE) | 2015-12-02 | — | — | CN | disclosed |
| CN-102652137-B | Prepare the method for indium chlorine two alkoxide | EVONIK DEGUSSA GMBH (DE) | 2015-12-02 | — | — | CN | disclosed |
| CN-103201409-B | Method for producing a layer containing indium oxide | EVONIK DEGUSSA GMBH | 2015-04-08 | — | — | CN | disclosed |
| CN-104350179-A | Method for producing indium oxide-containing layers | EVONIK INDUSTRIES AG | 2015-02-11 | — | — | CN | disclosed |
| US-8859332-B2 | Process for producing indium oxide-containing layers | EVONIK DEGUSSA GMBH (DE) | 2014-10-14 | — | — | US | disclosed |
| US-8841164-B2 | Process for producing indium oxide-containing layers, indium oxide-containing layers produced by the process and use thereof | EVONIK DEGUSSA GMBH (DE) | 2014-09-23 | — | — | US | disclosed |
| CN-102652187-A | Method for producing a layer containing indium oxide, indium oxide-containing layer produced by said method and use thereof | EVONIK DEGUSSA GMBH | 2012-08-29 | — | — | CN | disclosed |
| CN-102652137-A | Method for producing indium chloride alkoxides | EVONIK DEGUSSA GMBH | 2012-08-29 | — | — | CN | disclosed |
| CN-100512951-C | Indium adsorbing agent and method for separating indium | AQUATECH CORP SHARP K K (JP) | 2009-07-15 | — | — | CN | disclosed |
| US-7276600-B2 | Phthalocyanine derivatives and their applications in optical recording media | TSAI YEN CHENG | 2007-10-02 | — | — | US | disclosed |
| CN-101014407-A | Indium adsorbing agent and method for separating indium | AQUATECH CORP (JP) | 2007-08-08 | — | — | CN | disclosed |
| US-20060292494-A1 | Novel phthalocyanine derivatives, synthetic process thereof and their applications in optical recording media | TSAI YEN C | 2006-12-28 | — | — | US | disclosed |
| US-20060281026-A1 | Phthalocyanine derivatives and their applications in optical recording media | TSAI YEN C | 2006-12-14 | — | — | US | disclosed |
| US-6614033-B2 | Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-09-02 | — | — | US | disclosed |
| US-20020050573-A1 | Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes | KABUSHIKI KAISHA TOSHIBA | 2002-05-02 | — | — | US | disclosed |
| US-6335534-B1 | Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes | KABUSHIKI KAISHA TOSHIBA (JP) | 2002-01-01 | — | — | US | disclosed |