SCHEMBL5696489

SCHEMBL5696489

CCCCN[Si](C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7922038 0.91 TSHR (0.50)
SCHEMBL28605607 0.88 EPHX1 (0.50)
SCHEMBL28666302 0.88 EPHX1 (0.50)
SCHEMBL28128960 0.88 TSHR (0.48)
SCHEMBL6744306 0.88 EPHX1 (0.50)
SCHEMBL28654503 0.88 EPHX1 (0.50)
SCHEMBL10699097 0.88 EPHX1 (0.50)
SCHEMBL28662778 0.88 EPHX1 (0.50)
SCHEMBL28928656 0.88 EPHX1 (0.50)
SCHEMBL6746283 0.88 EPHX1 (0.50)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 130 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12421603-B2 Composition for high temperature atomic layer deposition of high quality silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2025-09-23 US claimed
CN-119900018-A Composition for high temperature atomic layer deposition of high quality silicon oxide films 弗萨姆材料美国有限责任公司 2025-04-29 CN claimed
EP-4013903-A1 COMPOSITIONS AND METHODS USING SAME FOR NON-CONFORMAL DEPOSITION OF SILICON-CONTAINING FILMS Versum Materials US, LLC (US) 2022-06-22 EP claimed
US-20210363639-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC (US) 2021-11-25 US claimed
EP-3844319-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS Versum Materials US, LLC (US) 2021-07-07 EP claimed
CN-112969816-A Compositions for high temperature atomic layer deposition of high quality silicon oxide films 弗萨姆材料美国有限责任公司 2021-06-15 CN claimed
WO-2021050368-A1 COMPOSITIONS AND METHODS USING SAME FOR NON-CONFORMAL DEPOSITION OF SILICON-CONTAINING FILMS VERSUM MATERIALS US, LLC (US) 2021-03-18 WO claimed
WO-2020072768-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC (US) 2020-04-09 WO claimed
US-9460912-B2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2016-10-04 US claimed
US-3983114-A Method of preparation of 6-aza uracile and its O-disilyl derivative NOBEL HOECHST CHIMIE (FR) 1976-09-28 US claimed
US-20260076110-A1 HYBRID ATOMIC LAYER DEPOSITION LAM RES CORP (US) 2026-03-12 US disclosed
US-20250372367-A1 DEPOSITION AND ETCH OF SILICON-CONTAINING LAYER LAM RES CORP (US) 2025-12-04 US disclosed
EP-4624625-A2 FUNCTIONALIZED CYCLOSILAZANES AS PRECURSORS FOR HIGH GROWTH RATE SILICON-CONTAINING FILMS Versum Materials US, LLC (US) 2025-10-01 EP disclosed
US-12421603-B2 Composition for high temperature atomic layer deposition of high quality silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2025-09-23 US disclosed
EP-3630785-B1 FUNCTIONALIZED CYCLOSILAZANES AS PRECURSORS FOR HIGH GROWTH RATE SILICON-CONTAINING FILMS VERSUM MAT US LLC (US) 2025-09-03 EP disclosed
WO-1991016301-A1 PESTICIDES THE WELLCOME FOUNDATION LIMITED (GB) 1991-10-31 WO disclosed
US-4745212-A ESTERIFICATION OR AMIDATION OF ISOCYANATOCARBOXYL CHLORIDE BAYER AKTIENGESELLSCHAFT (DE) 1988-05-17 US disclosed
EP-0263481-A2 Process for the preparation of isocyanates BAYER AG (DE) 1988-04-13 EP disclosed
US-4412073-A Isocyanurate preparation by catalytic, aminosilyl initiated cyclotrimerization of isocyanates RHONE-POULENC SPECIALITES CHIMIQUES (FR) 1983-10-25 US disclosed
US-3983114-A Method of preparation of 6-aza uracile and its O-disilyl derivative NOBEL HOECHST CHIMIE (FR) 1976-09-28 US disclosed