Fluoride Ion

Fluoride Ion

SCHEMBL57421

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nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride Ion SCHEMBL11056064 0.82 CA4 (0.33)
Fluoride Ion SCHEMBL1565216 0.82
Fluoride Ion SCHEMBL29150484 0.82
Fluoride Ion SCHEMBL4071926 0.82
Fluoride Ion SCHEMBL21747504 0.82 CA4 (0.33)
Fluoride SCHEMBL11139880 0.82
Fluoride Ion SCHEMBL28001640 0.82 CA4 (0.33)
SCHEMBL29395373 0.71
SCHEMBL19991555 0.71
SCHEMBL429074 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 2713 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122051184-A Composite positive electrode material, preparation method thereof, positive electrode plate and lithium ion battery 惠州亿纬锂能股份有限公司 2026-05-15 CN claimed
US-20260110958-A1 MASKS, METHODS OF MANUFACTURING MASKS, AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-04-23 US claimed
US-12532674-B2 Methods and apparatus for depositing a chalcogenide film and structures including the film ASM IP HOLDING B.V. (NL) 2026-01-20 US claimed
US-12509765-B2 Method and system for depositing transition metal carbide ASM IP HOLDING B.V. (NL) 2025-12-30 US claimed
US-20250357120-A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE INCLUDING PLASMA ETCHING PROCESS SAMSUNG ELECTRONICS CO LTD (KR) 2025-11-20 US claimed
EP-4634117-A1 ACTIVE ELECTRODE MATERIAL Echion Technologies Limited (GB) 2025-10-22 EP claimed
US-20250305133-A1 METHOD, SYSTEM AND APPARATUS FOR N-METAL FILM DEPOSITION ASM IP HOLDING B.V. (NL) 2025-10-02 US claimed
US-20250282699-A1 METHOD FOR PRODUCING 1,1,1,3,5,5,5-HEPTAFLUORO-2-PENTENE KANTO DENKA KOGYO CO., LTD. (JP) 2025-09-11 US claimed
US-12410368-B2 Etching gas composition, substrate processing apparatus, and pattern forming method using the etching gas composition SEMES CO., LTD. (KR) 2025-09-09 US claimed
US-20250230544-A1 DIETHYL ZINC AND METAL HALIDE PRECURSORS FOR DEPOSITION OF METAL FILMS ON SEMICONDUCTOR SUBSTRATES APPLIED MATERIALS, INC. (US) 2025-07-17 US claimed
US-4058575-A TANTALUM ANDOR NIOBIUM PENTAFLUORIDE CATALYST EXXON RESEARCH & ENGINEERING CO. (US) 1977-11-15 US claimed
US-4048251-A Autorefrigerated isomerization process EXXON RESEARCH AND ENGINEERING COMPANY (US) 1977-09-13 US claimed
US-4043900-A TANTALUM OR NIOBIUM PENTAFLUORIDE, HYDROGEN FLUORIDE EXXON RESEARCH AND ENGINEERING COMPANY (US) 1977-08-23 US claimed
US-4036738-A WITH BORON, TANTALUM, OR NIOBIUM FLUORIDE EXXON RESEARCH AND ENGINEERING COMPANY (US) 1977-07-19 US claimed
US-4036737-A WITH BORON, TANTALUM, OR NIOBIUM FLUORIDE EXXON RESEARCH AND ENGINEERING COMPANY (US) 1977-07-19 US claimed
US-4029556-A ELECTRODEPOSITION OF ALLOY MONACO EMLEE 1977-06-14 US claimed
US-4025459-A Noble metal hydrogenation catalysts promoted by fluoride containing acids EXXON RESEARCH AND ENGINEERING COMPANY (US) 1977-05-24 US claimed
US-4025577-A Hydroalkylation of paraffins with olefins utilizing hydrogen fluoride and metal pentafluoride catalyst EXXON RESEARCH AND ENGINEERING COMPANY (US) 1977-05-24 US claimed
US-3948761-A NIOBIUM, TANTALUM, MOLYBDENUM, GALLIUM OR TUNGSTEN HALIDE CATALYST EXXON RESEARCH AND ENGINEERING COMPANY (US) 1976-04-06 US claimed
US-3933931-A PERFLUOROETHYL IODIDE FROM IODINE, IODINE PENTAFLUORIDE AND TETRAFLUOROETHYLENE, NIOBIUM, TANTALUM, MOLYBDENUM OR BORON FLUORIDE CATALYST ASAHI GLASS CO., LTD. (JA) 1976-01-20 US claimed