⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5824313 | 1.00 | — | — | |
| SCHEMBL8506929 | 1.00 | — | — | |
| SCHEMBL15410658 | 0.80 | — | — | |
| SCHEMBL15410523 | 0.80 | — | — | |
| SCHEMBL370762 | 0.80 | — | — | |
| SCHEMBL24633451 | 0.80 | — | — | |
| SCHEMBL17924577 | 0.80 | — | — | |
| SCHEMBL471760 | 0.80 | — | — | |
| SCHEMBL424208 | 0.80 | — | — | |
| SCHEMBL15409418 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 152 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122054927-A | High conductivity passivation layer and method of forming the same during high aspect ratio plasma etching | 乔治洛德方法研究和开发液化空气有限公司 | 2026-05-15 | — | — | CN | claimed |
| US-12272562-B2 | Oxygen and iodine-containing hydrofluorocarbon compound for etching semiconductor structures | L'Aire Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) | 2025-04-08 | — | — | US | claimed |
| US-20250046618-A1 | HIGH CONDUCTIVE PASSIVATION LAYERS AND METHOD OF FORMING THE SAME DURING HIGH ASPECT RATIO PLASMA ETCHING | AMERICAN AIR LIQUIDE, INC. | 2025-02-06 | — | — | US | claimed |
| US-12106971-B2 | High conductive passivation layers and method of forming the same during high aspect ratio plasma etching | AMERICAN AIR LIQUIDE, INC. (US) | 2024-10-01 | — | — | US | claimed |
| CN-118369749-A | Oxygen and iodine containing hydrofluorocarbon compounds for etching semiconductor structures | 乔治洛德方法研究和开发液化空气有限公司 | 2024-07-19 | — | — | CN | claimed |
| CN-111816559-B | Chemical for TSV/MEMS/power device etching | 乔治洛德方法研究和开发液化空气有限公司 | 2024-06-11 | — | — | CN | claimed |
| EP-3563406-B1 | IODINE-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES | AIR LIQUIDE (FR) | 2024-04-24 | — | — | EP | claimed |
| EP-4267692-A1 | HIGH CONDUCTIVE PASSIVATION LAYERS AND METHOD OF FORMING THE SAME DURING HIGH ASPECT RATIO PLASNA ETCHING | L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) | 2023-11-01 | — | — | EP | claimed |
| CN-116884838-A | Iodine-containing compounds for etching semiconductor structures | 乔治洛德方法研究和开发液化空气有限公司 | 2023-10-13 | — | — | CN | claimed |
| CN-116848215-A | High conductivity passivation layer and method of forming the same during high aspect ratio plasma etching | 乔治洛德方法研究和开发液化空气有限公司 | 2023-10-03 | — | — | CN | claimed |
| US-20170178923-A1 | IODINE-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES | AMERICAN AIR LIQUIDE, INC. | 2017-06-22 | — | — | US | claimed |
| US-9659788-B2 | Nitrogen-containing compounds for etching semiconductor structures | AMERICAN AIR LIQUIDE, INC. (US) | 2017-05-23 | — | — | US | claimed |
| EP-3158579-A1 | CHEMISTRIES FOR TSV/MEMS/POWER DEVICE ETCHING | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) | 2017-04-26 | — | — | EP | claimed |
| US-20170103901-A1 | CHEMISTRIES FOR TSV/MEMS/POWER DEVICE ETCHING | AMERICAN AIR LIQUIDE, INC. (US) | 2017-04-13 | — | — | US | claimed |
| CN-105646757-A | Cationic polymerization system and preparation method of high-unsaturation-degree isoolefin copolymer | 中国石油化工股份有限公司 | 2016-06-08 | — | — | CN | claimed |
| CN-105580116-A | Method for etching semiconductor structure using etching gas | AIR LIQUIDE | 2016-05-11 | — | — | CN | claimed |
| US-20150371869-A1 | NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES | AMERICAN AIR LIQUIDE, INC. | 2015-12-24 | — | — | US | claimed |
| CN-105152881-A | Benzocyclobutene monomer containing adamantane and hexafluorocyclobutane structures, and preparation method and application thereof | UNIV FUDAN | 2015-12-16 | — | — | CN | claimed |
| CN-104885203-A | Fluorocarbon molecules for high aspect ratio oxide etch | AIR LIQUIDE | 2015-09-02 | — | — | CN | claimed |
| CN-101445511-B | Perfluor cyclobutyl arylene oligopolymer, preparation method thereof by using iterative coupled reaction and usage | SHANGHAI INST ORGANIC CHEM | 2011-09-14 | — | — | CN | claimed |