SCHEMBL5834046

SCHEMBL5834046

C[SiH2]C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16302544 0.74
SCHEMBL27698142 0.74
SCHEMBL16104841 0.70
SCHEMBL1051452 0.65
SCHEMBL263958 0.59
SCHEMBL206682 0.59
SCHEMBL27897329 0.59
SCHEMBL12958297 0.56
SCHEMBL3909063 0.56
SCHEMBL5085713 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107001371-B Oxipurinol class compound and its application 广东众生睿创生物科技有限公司 2019-07-05 CN disclosed
US-20170252352-A1 METHODS OF USE AND COMBINATIONS PFIZER INC. (US) 2017-09-07 US disclosed
US-9328104-B2 Selective androgen receptor modulators PFIZER INC. (US) 2016-05-03 US disclosed
US-20140155390-A1 NOVEL SELECTIVE ANDROGEN RECEPTOR MODULATORS PFIZER INC. (US) 2014-06-05 US disclosed
US-7795272-B2 Glucocorticoid mimetics, methods of making them, pharmaceutical compositions and uses thereof BOEHRINGER INGELHEIM PHARMACEUTICAL, INC. (US) 2010-09-14 US disclosed
US-7511179-B2 Fluorine-containing polymer, resist composition prepared from same and novel fluorine-containing monomer DAIKIN INDUSTRIES, LTD. (JP) 2009-03-31 US disclosed
CN-1247618-C Method for preparing catalyst system and its use in polymerization process UNIVATION TECH LLC (US) 2006-03-29 CN disclosed
US-7015168-B2 Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation LSI LOGIC CORPORATION (US) 2006-03-21 US disclosed
US-20050098856-A1 Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation BELL SEMICONDUCTOR, LLC 2005-05-12 US disclosed
CN-1476450-A Process for the preparation of a catalyst system and its use in a polymerization process �������ٶ������������ι�˾ 2004-02-18 CN disclosed
US-6649219-B2 Reacting one or more organofluorosilanes with an oxidizing agent LSI LOGIC CORPORATION 2003-11-18 US disclosed
US-20020117082-A1 Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation BELL SEMICONDUCTOR, LLC 2002-08-29 US disclosed
US-6365528-B1 PROVIDING REACTOR HAVING A SEMICONDUCTOR SUBSTRATE MOUNTED ON A SUBSTRATE SUPPORT; FORMINGFLUORINE AND CARBON-CONTAINING SILICON OXIDE DIELECTRIC MATERIAL BY REACTING TOGETHER: OXIDIZER AND SILANE COMPOUND LSI LOGIC CORPORATION 2002-04-02 US disclosed