SCHEMBL5859142

SCHEMBL5859142

C=CC([Ni])C1=C(CC)C=CC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4016752 0.76
SCHEMBL4021372 0.76
SCHEMBL5858225 0.76
SCHEMBL4018600 0.73
SCHEMBL5857965 0.73
SCHEMBL4020421 0.72
Hydrochloric Acid SCHEMBL7788508 0.69
Hydrochloric Acid SCHEMBL7788501 0.69
Hydrochloric Acid SCHEMBL7788506 0.69
Butadiene SCHEMBL4256114 0.68

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7045457-B2 Film forming material, film forming method, and silicide film TRI CHEMICAL LABORATORES INC. (JP) 2006-05-16 US claimed
US-20050059243-A1 Film forming material, film forming method, and silicide film TRI CHEMICAL LABORATORIES INC. (JP) 2005-03-17 US claimed
US-12509768-B2 Method of manufacturing semiconductor device, substrate processing apparatus and evaporation system Kokusai Electric Corporation (JP) 2025-12-30 US disclosed
US-20220042170-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND EVAPORATION SYSTEM Kokusai Electric Corporation (JP) 2022-02-10 US disclosed
US-20130267100-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND EVAPORATION SYSTEM HITACHI KOKUSAI ELECTRIC INC. (JP) 2013-10-10 US disclosed
US-7045457-B2 Film forming material, film forming method, and silicide film TRI CHEMICAL LABORATORES INC. (JP) 2006-05-16 US disclosed
US-20050059243-A1 Film forming material, film forming method, and silicide film TRI CHEMICAL LABORATORIES INC. (JP) 2005-03-17 US disclosed