SCHEMBL5859650

SCHEMBL5859650

COC1(OC)O[Si](OC)(OC)CCC1(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7791679 0.78
SCHEMBL1908362 0.67
SCHEMBL2908761 0.66
SCHEMBL3474686 0.65
SCHEMBL1092187 0.64
SCHEMBL4827744 0.61
SCHEMBL28013750 0.61
SCHEMBL12202144 0.60
SCHEMBL17994935 0.59
SCHEMBL19085008 0.57

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118253469-A Laminate and method for producing same 株式会社东进世美肯 2024-06-28 CN disclosed
US-10570311-B2 Laminate and method for producing same DONGJIN SEMICHEM CO., LTD. (KR) 2020-02-25 US disclosed
US-20180237658-A1 LAMINATE AND METHOD FOR PRODUCING SAME DONGJIN SEMICHEM CO., LTD. (KR) 2018-08-23 US disclosed
US-7108922-B2 Siloxane-based resin and interlayer insulating film formed using the same SAMSUNG ELECTRONIC CO., LTD. (KR) 2006-09-19 US disclosed
EP-1510537-B1 Siloxane-based resin and interlayer insulating film formed using the same SAMSUNG ELECTRONICS CO LTD (KR) 2006-05-24 EP disclosed
US-20050049382-A1 Novel siloxane-based resin and interlayer insulating film formed using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-03-03 US disclosed
EP-1510537-A1 Siloxane-based resin and interlayer insulating film formed using the same Samsung Electronics Co., Ltd (KR) 2005-03-02 EP disclosed