⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Fluoride SCHEMBL5374868 | 1.00 | — | — | |
| Fluoride SCHEMBL1539041 | 1.00 | — | — | |
| Fluoride SCHEMBL5448182 | 0.82 | — | — | |
| Fluoride SCHEMBL10010956 | 0.82 | — | — | |
| Fluoride SCHEMBL31202657 | 0.82 | — | — | |
| Fluoride SCHEMBL6002208 | 0.82 | — | — | |
| Fluoride SCHEMBL6409530 | 0.82 | — | — | |
| Fluoride SCHEMBL7701618 | 0.82 | — | — | |
| Fluoride SCHEMBL2942149 | 0.82 | — | — | |
| Fluoride SCHEMBL31718143 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 306 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12637616-B2 | Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device | VERSUM MATERIALS US, LLC (US) | 2026-05-26 | — | — | US | claimed |
| CN-120033322-A | Preparation method of composite solid electrolyte for transmitting lithium ions by weak coordination relay | 北京理工大学 | 2025-05-23 | — | — | CN | claimed |
| US-20240294433-A1 | IRON-CONTAINING BINDER | RESOURCEFULL BV (BE) | 2024-09-05 | — | — | US | claimed |
| US-20240271040-A1 | Etching Solution For Selectively Removing Silicon-Germanium Alloy From A Silicon-Germanium/ Silicon Stack During Manufacture Of A Semiconductor Device | VERSUM MATERIALS US, LLC | 2024-08-15 | — | — | US | claimed |
| EP-3537473-B1 | ETCHING SOLUTION FOR SELECTIVELY REMOVING SILICON-GERMANIUM ALLOY FROM A SILICON-GERMANIUM/ GERMANIUM STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE | VERSUM MAT US LLC (US) | 2024-05-01 | — | — | EP | claimed |
| EP-4347523-A1 | IRON-CONTAINING BINDER | ResourceFull BV (BE) | 2024-04-10 | — | — | EP | claimed |
| EP-3447792-B1 | ETCHING SOLUTION FOR SELECTIVELY REMOVING TANTALUM NITRIDE OVER TITANIUM NITRIDE DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE | VERSUM MAT US LLC (US) | 2024-04-03 | — | — | EP | claimed |
| CN-117616102-A | Etching solution for selectively removing silicon-germanium alloy from silicon-germanium/silicon stack during semiconductor device fabrication | 弗萨姆材料美国有限责任公司 | 2024-02-27 | — | — | CN | claimed |
| EP-4323470-A1 | ETCHING SOLUTION FOR SELECTIVELY REMOVING SILICON-GERMANIUM ALLOY FROM A SILICON-GERMANIUM/ SILICON STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE | Versum Materials US, LLC (US) | 2024-02-21 | — | — | EP | claimed |
| EP-3447791-B1 | ETCHING SOLUTION FOR SELECTIVELY REMOVING SILICON-GERMANIUM ALLOY FROM A SILICON-GERMANIUM/ SILICON STACK DURING MANUFACTURE OF A SEMICONDUCTOR DEVICE | VERSUM MAT US LLC (US) | 2023-07-26 | — | — | EP | claimed |
| WO-2002049090-A2 | METHOD FOR POLISHING DIELECTRIC LAYERS USING FIXED ABRASIVE PADS | INFINEON TECHNOLOGIES NORTH AMERICA CORP. (US) | 2002-06-20 | — | — | WO | claimed |
| US-6350692-B1 | DISPENSING INORGANIC FLUORINE COMPOUND ON SURFACE IN SOLUTION | INFINEON TECHNOLOGIES AG (DE) | 2002-02-26 | — | — | US | claimed |
| US-6254796-B1 | Selective etching of silicate | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2001-07-03 | — | — | US | claimed |
| US-6200891-B1 | Removal of dielectric oxides | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2001-03-13 | — | — | US | claimed |
| US-6150282-A | Selective removal of etching residues | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-11-21 | — | — | US | claimed |
| US-6117796-A | Removal of silicon oxide | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-09-12 | — | — | US | claimed |
| US-6066267-A | Etching of silicon nitride | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-05-23 | — | — | US | claimed |
| US-6033996-A | Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-03-07 | — | — | US | claimed |
| US-5965465-A | Etching of silicon nitride | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1999-10-12 | — | — | US | claimed |
| EP-0887323-A1 | Selective etching of silicate | International Business Machines Corporation (US) | 1998-12-30 | — | — | EP | claimed |