⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10801586 | 0.87 | — | — | |
| SCHEMBL28589 | 0.87 | — | — | |
| SCHEMBL10799439 | 0.87 | — | — | |
| SCHEMBL4001746 | 0.75 | — | — | |
| SCHEMBL3221599 | 0.75 | — | — | |
| SCHEMBL23522850 | 0.75 | — | — | |
| Hydrochloric Acid SCHEMBL8355120 | 0.75 | — | — | |
| Charcoal, Activated SCHEMBL7626325 | 0.75 | — | — | |
| SCHEMBL23398235 | 0.75 | — | — | |
| SCHEMBL22684404 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 6892 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260082633-A1 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-03-19 | — | — | US | claimed |
| US-20260006890-A1 | EPITAXIAL LAYERS IN SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-01-01 | — | — | US | claimed |
| US-20250218791-A1 | SEMICONDUCTOR DEVICE WITH CATALYTIC CONDUCTIVE LAYER AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2025-07-03 | — | — | US | claimed |
| US-20250218859-A1 | SEMICONDUCTOR DEVICE WITH CATALYTIC CONDUCTIVE LAYER AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2025-07-03 | — | — | US | claimed |
| US-20250218861-A1 | SEMICONDUCTOR DEVICE WITH CATALYTIC CONDUCTIVE LAYER AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2025-07-03 | — | — | US | claimed |
| US-12159938-B2 | Semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-12-03 | — | — | US | claimed |
| CN-118737947-A | Semiconductor wafer and manufacturing method thereof, transistor structure and manufacturing method thereof | 广州诺尔光电科技有限公司 | 2024-10-01 | — | — | CN | claimed |
| CN-118553619-A | Forming method of MOSFET device | 杭州积海半导体有限公司 | 2024-08-27 | — | — | CN | claimed |
| US-12062699-B2 | Horizontal Current Bipolar Transistor with Silicon-Germanium base | University of Zagreb, Faculty of Electrical Engineering and Computing (HR) | 2024-08-13 | — | — | US | claimed |
| US-20240186361-A1 | VISIBLE AND INFRARED IMAGE SENSOR | Commissariat à I'énergie atomique et aux énergies alternatives (FR) | 2024-06-06 | — | — | US | claimed |
| US-20020033511-A1 | Advanced CMOS using super steep retrograde wells | TEXAS INSTRUMENTS INCORPORATED | 2002-03-21 | — | — | US | claimed |
| US-20020016029-A1 | Thin film transistor and producing method thereof | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2002-02-07 | — | — | US | claimed |
| US-6331476-B1 | Thin film transistor and producing method thereof | MAUSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2001-12-18 | — | — | US | claimed |
| US-6291313-B1 | Method and device for controlled cleaving process | SILICON GENESIS CORPORATION | 2001-09-18 | — | — | US | claimed |
| US-6197641-B1 | Process for fabricating vertical transistors | LUCENT TECHNOLOGIES INC. | 2001-03-06 | — | — | US | claimed |
| EP-1063694-A1 | Process for fabricating vertical transistors | LUCENT TECHNOLOGIES INC. (US) | 2000-12-27 | — | — | EP | claimed |
| EP-1063697-A1 | A cmos integrated circuit having vertical transistors and a process for fabricating same | LUCENT TECHNOLOGIES INC. (US) | 2000-12-27 | — | — | EP | claimed |
| EP-0989599-A1 | Process for fabricating vertical transistors | LUCENT TECHNOLOGIES INC. (US) | 2000-03-29 | — | — | EP | claimed |
| US-6027975-A | Process for fabricating vertical transistors | LUCENT TECHNOLOGIES INC. (US) | 2000-02-22 | — | — | US | claimed |
| US-4885614-A | Semiconductor device with crystalline silicon-germanium-carbon alloy | HITACHI, LTD. (JP) | 1989-12-05 | — | — | US | claimed |