SCHEMBL596270

SCHEMBL596270

[Al+3].[As-3].[In]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7124424 0.87
SCHEMBL7263528 0.87
SCHEMBL3608111 0.87
SCHEMBL59870 0.82
SCHEMBL1354341 0.78
SCHEMBL11763227 0.67
SCHEMBL8507745 0.67
SCHEMBL709892 0.67
SCHEMBL8720603 0.67
SCHEMBL2409388 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 83 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20220099813-A1 LIDAR SYSTEM WITH LOW-NOISE AVALANCHE PHOTODIODE LUMINAR TECHNOLOGIES, INC. 2022-03-31 US claimed
US-9685529-B1 III-V NFETs including channel barrier layers to reduce band-to-band leakage current GLOBALFOUNDRIES INC. (KY) 2017-06-20 US claimed
US-8466490-B2 Enhanced segmented channel MOS transistor with multi layer regions SYNOPSYS, INC. (US) 2013-06-18 US claimed
US-8115213-B2 Semiconductor light sources, systems, and methods PHOSEON TECHNOLOGY, INC. (US) 2012-02-14 US claimed
US-7605449-B2 Enhanced segmented channel MOS transistor with high-permittivity dielectric isolation material SYNOPSYS, INC. (US) 2009-10-20 US claimed
US-7508031-B2 Enhanced segmented channel MOS transistor with narrowed base regions SYNOPSYS, INC. (US) 2009-03-24 US claimed
US-7454112-B2 Ridge and mesa optical waveguides LUCENT TECHNOLOGIES INC. (US) 2008-11-18 US claimed
US-20080230803-A1 Integrated Contact Interface Layer NORTHROP GRUMMAN SPACE & MISSION SYSTEMS CORP. (US) 2008-09-25 US claimed
US-20080191194-A1 SEMICONDUCTOR LIGHT SOURCES, SYSTEMS, AND METHODS PHOSEON TECHNOLOGY, INC. (US) 2008-08-14 US claimed
US-20070230886-A1 Ridge and mesa optical waveguides LUCENT TECHNOLOGIES INC. (US) 2007-10-04 US claimed
US-20070128782-A1 Enhanced Segmented Channel MOS Transistor with Narrowed Base Regions SYNOPSYS, INC. (US) 2007-06-07 US claimed
US-20070122953-A1 Enhanced Segmented Channel MOS Transistor with High-Permittivity Dielectric Isolation Material SYNOPSYS, INC. (US) 2007-05-31 US claimed
US-20070120156-A1 Enhanced Segmented Channel MOS Transistor with Multi Layer Regions SYNOPSYS, INC. (US) 2007-05-31 US claimed
US-7141446-B2 Optically- and electrically-addressable concentrators of biological and chemical materials HRL LABORATORIES, LLC (US) 2006-11-28 US claimed
US-6870234-B2 Optically- and electrically-addressable concentrators of biological and chemical materials HRL LABORATORIES, LLC (US) 2005-03-22 US claimed
US-20050042773-A1 Optically-and electrically-addressable concentrators of biological and chemical materials HRL LABORATORIES, LLC 2005-02-24 US claimed
US-20030066999-A1 Optically- and electrically-addressable concentrators of biological and chemical materials HRL LABORATORIES, LLC 2003-04-10 US claimed
WO-2003021268-A1 ADDRESSABLE CONCENTRATORS HRL LABORATORIES, LLC (US) 2003-03-13 WO claimed
US-4807006-A Heterojunction interdigitated schottky barrier photodetector INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1989-02-21 US claimed
EP-0296428-A2 Heterojunction interdigitated schottky barrier photodetector International Business Machines Corporation (US) 1988-12-28 EP claimed