SCHEMBL601190

SCHEMBL601190

SC1CCOCC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10506120 0.96 TTR (0.33)
SCHEMBL8984105 0.96 TTR (0.43)
SCHEMBL601264 0.79
SCHEMBL11134209 0.69 TTR (0.38)
SCHEMBL11130271 0.69 TTR (0.38)
SCHEMBL11130390 0.69 TTR (0.38)
SCHEMBL18207914 0.69
SCHEMBL23682710 0.67 TTR (0.42)
SCHEMBL10282070 0.64
SCHEMBL16878481 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 182 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260123372-A1 MANUFACTURING SEMICONDUCTOR DEVICE USING SELECTIVE DIELECTRIC ON DIELECTRIC (DOD) DEPOSITION PROCESS SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-30 US claimed
US-12518966-B2 Selective plasma enhanced atomic layer deposition VERSUM MATERIALS US, LLC (US) 2026-01-06 US claimed
US-20240047196-A1 SELECTIVE THERMAL ATOMIC LAYER DEPOSITION VERSUM MAT US LLC (US) 2024-02-08 US claimed
US-20240014036-A1 SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION VERSUM MATERIALS US, LLC 2024-01-11 US claimed
US-20230416911-A1 SELECTIVE DEPOSITION OF SILICON AND OXYGEN CONTAINING DIELECTRIC FILM ON DIELECTRICS VERSUM MATERIALS US, LLC 2023-12-28 US claimed
CN-116918029-A selective thermal atomic layer deposition 弗萨姆材料美国有限责任公司 2023-10-20 CN claimed
CN-116761906-A Selective plasma enhanced atomic layer deposition 弗萨姆材料美国有限责任公司 2023-09-15 CN claimed
EP-4240886-A1 SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION Versum Materials US, LLC (US) 2023-09-13 EP claimed
EP-4241299-A1 SELECTIVE THERMAL ATOMIC LAYER DEPOSITION Versum Materials US, LLC (US) 2023-09-13 EP claimed
CN-113933430-B High-sensitivity and high-precision analysis method suitable for detecting organic sulfur compounds in main stream smoke of cigarettes 中国烟草总公司郑州烟草研究院 2023-09-05 CN claimed
WO-2022119860-A9 SELECTIVE THERMAL ATOMIC LAYER DEPOSITION VERSUM MATERIAL US, LLC (US) 2023-08-24 WO claimed
EP-4225964-A1 SELECTIVE DEPOSITION OF SILICON AND OXYGEN CONTAINING DIELECTRIC FILM ON DIELECTRICS Versum Materials US, LLC (US) 2023-08-16 EP claimed
CN-116583623-A Selective deposition of silicon and oxygen containing dielectric films on dielectrics 弗萨姆材料美国有限责任公司 2023-08-11 CN claimed
WO-2022119860-A1 SELECTIVE THERMAL ATOMIC LAYER DEPOSITION VERSUM MATERIAL US, LLC (US) 2022-06-09 WO claimed
WO-2022119865-A1 SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION VERSUM MATERIALS US, LLC (US) 2022-06-09 WO claimed
WO-2022104226-A1 SELECTIVE DEPOSITION OF SILICON AND OXYGEN CONTAINING DIELECTRIC FILM ON DIELECTRICS VERSUM MATERIALS US, LLC (US) 2022-05-19 WO claimed
CN-113933430-A High-sensitivity and high-precision analysis method suitable for detecting organic sulfur compounds in cigarette mainstream smoke 中国烟草总公司郑州烟草研究院 2022-01-14 CN claimed
US-20260123372-A1 MANUFACTURING SEMICONDUCTOR DEVICE USING SELECTIVE DIELECTRIC ON DIELECTRIC (DOD) DEPOSITION PROCESS SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-30 US disclosed
EP-1020444-A1 6-PHENOXYPICOLINIC ACID, ALKYLIDENEHYDRAZIDE DERIVATIVES, PROCESS FOR PRODUCING THE SAME, AND HERBICIDE KUREHA KAGAKU KOGYO KABUSHIKI KAISHA (JP) 2000-07-19 EP disclosed
US-6001850-A HAVING GONADOTROPIN-RELEASING HORMONE ANTAGONISTIC ACTIVITY ARE USEFUL AS PROPHYLACTIC OR THERAPEUTIC AGENTS FOR THE PREVENTION OR TREATMENT OF SEVERAL HORMONE DEPENDENT DISEASES TAKEDA CHEMICAL INDUSTRIES, LTD. (JP) 1999-12-14 US disclosed