⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ethane SCHEMBL27485206 | 0.87 | — | — | |
| Ethane SCHEMBL45 | 0.82 | — | — | |
| Ethane SCHEMBL119366 | 0.82 | — | — | |
| Ethane SCHEMBL11665218 | 0.82 | — | — | |
| Ethane SCHEMBL11324909 | 0.82 | — | — | |
| Ethane SCHEMBL23044683 | 0.67 | — | — | |
| Ethane SCHEMBL15258695 | 0.67 | — | — | |
| Ethane SCHEMBL10894685 | 0.67 | — | — | |
| Ethane SCHEMBL10904760 | 0.67 | — | — | |
| Ethane SCHEMBL22691971 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-103508440-A | Preparation method of boron-doped graphene | OCEANS KING LIGHTING SCIENCE | 2014-01-15 | — | — | CN | claimed |
| CN-103449408-A | Boron doped graphene and preparation method thereof | OCEANS KING LIGHTING SCIENCE | 2013-12-18 | — | — | CN | claimed |
| CN-103449415-A | Preparation method of boron-doped graphene | OCEANS KING LIGHTING SCIENCE | 2013-12-18 | — | — | CN | claimed |
| CN-1072276-C | Process for producing layers of cubic boron nitride | FRAUNHOFER GES FORSCHUNG (DE) | 2001-10-03 | — | — | CN | claimed |
| CN-1143983-A | Process for producing layers of cubic boron nitride | FRAUNHOFER GES FORSCHUNG (DE) | 1997-02-26 | — | — | CN | claimed |
| CN-118203934-A | Semiconductor waste gas treatment system and water-gas separator thereof | 日扬科技股份有限公司 | 2024-06-18 | — | — | CN | disclosed |
| CN-111892021-B | Temperature control synthesis device | 河南科技大学 | 2023-10-13 | — | — | CN | disclosed |
| CN-112928063-B | Interconnect structure and method of making the same | 长鑫存储技术有限公司 | 2023-05-23 | — | — | CN | disclosed |
| CN-111599814-B | Split-gate flash memory and forming method thereof | 上海华虹宏力半导体制造有限公司 | 2023-04-18 | — | — | CN | disclosed |
| CN-111514892-B | Bismuth vanadate/silver chromate heterojunction photocatalyst and preparation method and application thereof | 蚌埠学院 | 2022-07-08 | — | — | CN | disclosed |
| CN-214261359-U | Borane gas mixture processing device | 江苏安瑞森电子材料有限公司 | 2021-09-24 | — | — | CN | disclosed |
| CN-111945131-B | Method for preparing diamond by adopting boron carbide through microwave plasma | 上海征世科技股份有限公司 | 2021-08-06 | — | — | CN | disclosed |
| CN-101083271-A | Electroluminescent display device and driving method thereof | SEMICONDUCTOR ENERGY LAB (JP) | 2007-12-05 | — | — | CN | disclosed |
| CN-1331242-C | Electroluminescent display and electronic device | SEMICONDUCTOR ENERGY LAB (JP) | 2007-08-08 | — | — | CN | disclosed |
| CN-1290041-A | Electroluminescent display and electronic device | SEMICONDUCTOR ENERGY LAB (JP) | 2001-04-04 | — | — | CN | disclosed |
| US-6143610-A | Method for fabricating high-density semiconductor read-only memory device | UNITED MICROELECTRONICS CORP. | 2000-11-07 | — | — | US | disclosed |
| US-5904526-A | Method of fabricating high density semiconductor read-only memory device | UNITED MICROELECTRONICS CORP. (TW) | 1999-05-18 | — | — | US | disclosed |
| US-5825069-A | High-density semiconductor read-only memory device | UNITED MICROELTRONICS CORP. (TW) | 1998-10-20 | — | — | US | disclosed |
| CN-1008574-B | Improved Boron doped semiconductor materials and preparation method thereof | SOVONICS SOLAR SYSTEMS (US) | 1990-06-27 | — | — | CN | disclosed |
| CN-85108824-A | Improved Boron doped semiconductor materials and preparation method thereof | — | 1986-08-06 | — | — | CN | disclosed |