⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29702268 | 0.87 | — | — | |
| SCHEMBL31509583 | 0.87 | — | — | |
| SCHEMBL20335310 | 0.87 | — | — | |
| SCHEMBL5615326 | 0.87 | — | — | |
| SCHEMBL2386291 | 0.87 | — | — | |
| SCHEMBL7148691 | 0.87 | — | — | |
| SCHEMBL11613624 | 0.82 | — | — | |
| SCHEMBL28737 | 0.82 | — | — | |
| SCHEMBL15398 | 0.82 | — | — | |
| SCHEMBL11609687 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1326 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12347770-B2 | One-time-programmable device structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-01 | — | — | US | claimed |
| CN-120199831-A | Solid oxide direct ammonia fuel cell ammonia electrode and preparation method thereof | 南京理工大学 | 2025-06-24 | — | — | CN | claimed |
| CN-118184370-B | Based on BaO and ZrO2Composite oxide refractory material of system and preparation method thereof | 晋拓科技股份有限公司 | 2025-03-28 | — | — | CN | claimed |
| US-20240387365-A1 | ONE-TIME-PROGRAMMABLE DEVICE STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-21 | — | — | US | claimed |
| US-20240371948-A1 | Back-End-Of-Line Devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-07 | — | — | US | claimed |
| US-20240243165-A1 | CAPACITOR AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-07-18 | — | — | US | claimed |
| CN-118184370-A | Based on BaO and ZrO2Composite oxide refractory material of system and preparation method thereof | 晋拓科技股份有限公司 | 2024-06-14 | — | — | CN | claimed |
| EP-3996159-B1 | CHALCOGEN COMPOUND AND SEMICONDUCTOR DEVICE INCLUDING THE SAME | SAMSUNG ELECTRONICS CO LTD (KR) | 2023-11-15 | — | — | EP | claimed |
| US-11799001-B2 | Back-end-of-line devices | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-10-24 | — | — | US | claimed |
| CN-113316482-B | Reaction device and fuel cell power generation system | 东京瓦斯株式会社 | 2023-08-25 | — | — | CN | claimed |
| US-20070181947-A1 | Complementary metal-oxide-semiconductor transistor structure for high density and high performance integrated circuits | THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (CN) | 2007-08-09 | — | — | US | claimed |
| US-7217643-B2 | Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures | FREESCALE SEMICONDUCTORS, INC. (US) | 2007-05-15 | — | — | US | claimed |
| US-20070018219-A1 | Unit cell structure, method of manufacturing the same, non-volatile semiconductor device having the unit cell structure and method of manufacturing the non-volatile semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-01-25 | — | — | US | claimed |
| US-20060197227-A1 | Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures | NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) | 2006-09-07 | — | — | US | claimed |
| US-20060025310-A1 | Enhanced pinning in YBCO films with BaZrO3 nanoparticles | TRIAD NATIONAL SECURITY, LLC | 2006-02-02 | — | — | US | claimed |
| US-20040067386-A1 | Laminated film and method forming film | INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, THE JURIDICAL FOUNDATION (JP) | 2004-04-08 | — | — | US | claimed |
| EP-1375697-A1 | LAMINATED FILM AND METHOD OF FORMING FILM | Sumitomo Electric Industries, Ltd. (JP) | 2004-01-02 | — | — | EP | claimed |
| WO-1997031878-A1 | CERAMIC MEMBER, METHOD FOR PRODUCING SUCH A MEMBER AND USE OF SUCH A MEMBER | UNIVERSITE DE GENEVE (CH) | 1997-09-04 | — | — | WO | claimed |
| EP-0566071-B1 | Method for reducing nitrogen oxides | TOYODA CHUO KENKYUSHO KK (JP) | 1997-07-02 | — | — | EP | claimed |
| US-5352337-A | Efficient catalytic reduction in oxidizing atmosphere using hydrogen from electrolysis of water vapor as reducing agent, for exhaust systems of internal combustion engines | KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO (JP) | 1994-10-04 | — | — | US | claimed |