Trimethylammonium

Trimethylammonium

SCHEMBL634091

CN(C)C.F

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 362 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117246982-B Lithium bis (fluorosulfonyl) imide and method for purifying lithium bis (fluorosulfonyl) imide Shidai Sikang New Material Co.,Ltd. (CN) 2026-05-26 CN claimed
US-12404231-B2 Method for preparing trifluoromethyl aromatic compound JINGDEZHEN FUSHINE LIFE TECHNOLOGY CO., LTD. (CN) 2025-09-02 US claimed
US-20250257028-A1 Method for Preparing Trifluoromethyl Aromatic Compound JINGDEZHEN FUSHINE LIFE TECHNOLOGY CO., LTD. (CN) 2025-08-14 US claimed
CN-120118250-A Surfactant, preparation method and application thereof 浙江蓝天环保高科技股份有限公司 2025-06-10 CN claimed
CN-120118223-A Method for adjusting particle size of fluorine-containing polymer emulsion 浙江蓝天环保高科技股份有限公司 2025-06-10 CN claimed
CN-117964490-B Preparation method of trifluoromethyl aromatic compound 景德镇富祥生命科技有限公司 2024-12-20 CN claimed
CN-118908934-A Compounds, methods of preparation and uses thereof 宁德时代新能源科技股份有限公司 2024-11-08 CN claimed
CN-118272091-A Etching composition and application thereof 安集微电子科技(上海)股份有限公司 2024-07-02 CN claimed
CN-118256250-A Etching composition and application thereof 宁波安集微电子科技有限公司 2024-06-28 CN claimed
CN-117964490-A Preparation method of trifluoromethyl aromatic compound 景德镇富祥生命科技有限公司 2024-05-03 CN claimed
US-20030205785-A1 Low k film application for interlevel dielectric and method of cleaning etched features MICRON TECHNOLOGY, INC. 2003-11-06 US claimed
US-20030207514-A1 Low k film application for interlevel dielectric and method of cleaning etched features MICRON TECHNOLOGY, INC. 2003-11-06 US claimed
US-6605863-B2 Trimethylammonium fluoride solution to selectively etch a dielectric antireflective coating of silicon oxynitride or silicon oxide layer on tetraethylorthosilicate substrate MICRON TECHNOLOGY, INC. 2003-08-12 US claimed
US-20030102532-A1 LOW K FILM APPLICATION FOR INTERLEVEL DIELECTRIC AND METHOD OF CLEANING ETCHED FEATURES MICRON TECHNOLOGY, INC. (US) 2003-06-05 US claimed
US-6573175-B1 Dry low k film application for interlevel dielectric and method of cleaning etched features MICRON TECHNOLOGY, INC. 2003-06-03 US claimed
US-6001549-A IMAGING ELEMENT CONTAINING ANTISTATIC AGENT EASTMAN KODAK COMPANY (US) 1999-12-14 US claimed
EP-0633264-B1 Tertiary amino-aluminoxane halides ALBEMARLE CORP (US) 1999-03-03 EP claimed
US-5466647-A Olefin polymerization catalyst ALBEMARLE CORPORATION (US) 1995-11-14 US claimed
US-5412131-A Olefin polymerization catalyst ALBEMARLE CORPORATION (US) 1995-05-02 US claimed
EP-0633264-A1 Tertiary amino-aluminoxane halides ALBEMARLE CORPORATION (US) 1995-01-11 EP claimed