⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Arsenic SCHEMBL10599833 | 1.00 | — | — | |
| Arsenic SCHEMBL28166574 | 1.00 | — | — | |
| Arsenic SCHEMBL27611171 | 0.87 | — | — | |
| Arsenic SCHEMBL10338513 | 0.87 | — | — | |
| Arsenic SCHEMBL5053904 | 0.87 | — | — | |
| Arsenic SCHEMBL18787928 | 0.87 | — | — | |
| Arsenic SCHEMBL27925066 | 0.87 | — | — | |
| Phosphine SCHEMBL17061021 | 0.87 | — | — | |
| Arsenic SCHEMBL29060247 | 0.87 | — | — | |
| Arsenic SCHEMBL144658 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 2131 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12620779-B2 | VCSEL with self-aligned microlens to improve beam divergence | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-05-05 | — | — | US | claimed |
| CN-120127499-A | Multi-wavelength high-polarization-degree straight cavity surface emitting laser | 无锡华兴光电研究有限公司 | 2025-06-10 | — | — | CN | claimed |
| CN-118745572-B | Gallium aluminum arsenic-based epitaxial alloy and preparation method thereof | 深圳市奥伦德元器件有限公司 | 2025-03-18 | — | — | CN | claimed |
| CN-110572073-B | Hybrid friction nano generator | 华中科技大学 | 2025-03-07 | — | — | CN | claimed |
| CN-111446019-B | Tritium-volt battery with three-dimensional nano structure | 厦门大学 | 2025-01-10 | — | — | CN | claimed |
| US-20250015230-A1 | LIGHT EMITTING DIODE | TIANJIN SANAN OPTOELECTRONICS CO., LTD. (CN) | 2025-01-09 | — | — | US | claimed |
| CN-119275714-A | Dual-medium DBR (distributed Bragg reflector) type vertical cavity surface emitting laser and preparation method thereof | 中国科学院物理研究所 | 2025-01-07 | — | — | CN | claimed |
| CN-119170317-A | Heterogeneous tuberculosis battery, preparation method and auxiliary tweezer | 广西电网有限责任公司电力科学研究院 | 2024-12-20 | — | — | CN | claimed |
| CN-118888409-A | Metal film-medium resonant cavity enhanced negative electron affinity photocathode and preparation method thereof | 东华理工大学 | 2024-11-01 | — | — | CN | claimed |
| CN-114899686-B | Low-noise microcavity soliton optical frequency comb generation system and method adopting composite control means | 中国人民解放军国防科技大学 | 2024-10-22 | — | — | CN | claimed |
| EP-1053577-A1 | GAUSSIAN PROFILE PROMOTING CAVITY FOR SEMICONDUCTOR LASER | THE UNIVERSITY OF UTAH RESEARCH FOUNDATION (US) | 2000-11-22 | — | — | EP | claimed |
| CN-1250230-A | Linear X-ray detector array with new structure and its detection method | UNIV BEIJING NORMAL (CN) | 2000-04-12 | — | — | CN | claimed |
| US-6002703-A | Gaussian profile promoting cavity for semiconductor laser | UNIVERSITY OF UTAH RESEARCH FOUNDATION (US) | 1999-12-14 | — | — | US | claimed |
| WO-1999039409-A1 | GAUSSIAN PROFILE PROMOTING CAVITY FOR SEMICONDUCTOR LASER | THE UNIVERSITY OF UTAH RESEARCH FOUNDATION (US) | 1999-08-05 | — | — | WO | claimed |
| CN-1192587-A | Field effect transistor | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 1998-09-09 | — | — | CN | claimed |
| CN-1132939-A | Bipolar transistor circuit element | MITSUBISHI ELECTRIC CORP (JP) | 1996-10-09 | — | — | CN | claimed |
| CN-1045661-A | II-VI family film substrate pit structure and processing method | CHANGCHUN PHYSICAL INST CHINES (CN) | 1990-09-26 | — | — | CN | claimed |
| US-4804853-A | Compact particle flux monitor | HIGH YIELD TECHNOLOGY (US) | 1989-02-14 | — | — | US | claimed |
| EP-0283278-A2 | Compound semiconductor device having nonalloyed ohmic contacts | FUJITSU LIMITED (JP) | 1988-09-21 | — | — | EP | claimed |
| US-4657603-A | MULTILAYER-SUBSTRATE, DOPED AMORPHOUS GERMANIUM, THEN GALLIUM ARSENIDE | SIEMENS AKTIENGESELLSCHAFT (DE) | 1987-04-14 | — | — | US | claimed |