⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL28050482 | 0.82 | — | — | |
| SCHEMBL28317872 | 0.82 | — | — | |
| SCHEMBL8007804 | 0.82 | — | — | |
| SCHEMBL8013383 | 0.82 | — | — | |
| SCHEMBL21630451 | 0.82 | — | — | |
| SCHEMBL28305490 | 0.82 | — | — | |
| SCHEMBL12096966 | 0.82 | — | — | |
| SCHEMBL28579503 | 0.82 | — | — | |
| SCHEMBL21271516 | 0.82 | — | — | |
| Methane SCHEMBL17748000 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 191 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3320562-B1 | FORMULATIONS TO SELECTIVELY ETCH SILICON GERMANIUM RELATIVE TO GERMANIUM | ENTEGRIS INC (US) | 2024-08-28 | — | — | EP | claimed |
| US-11777016-B2 | Method of forming backside power rails | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-10-03 | — | — | US | claimed |
| CN-109841498-B | Semiconductor device and method for manufacturing the same | 爱思开海力士有限公司 | 2023-09-19 | — | — | CN | claimed |
| CN-114534790-B | Germanium tungsten oxy-acid salt with efficient Lewis acid-base synergistic catalytic performance | 福州大学 | 2023-08-08 | — | — | CN | claimed |
| US-11682540-B2 | Ion implantation system with mixture of arc chamber materials | ENTEGRIS, INC. (US) | 2023-06-20 | — | — | US | claimed |
| CN-115513210-A | Memory, manufacturing method thereof and memory system | 长江存储科技有限责任公司 | 2022-12-23 | — | — | CN | claimed |
| US-11515206-B2 | Semiconductor structure with doped via plug | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-11-29 | — | — | US | claimed |
| US-20220336641-A1 | Method of Forming Backside Power Rails | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-10-20 | — | — | US | claimed |
| CN-107851660-B | Formulations for selective etching of silicon germanium relative to germanium | 恩特格里斯公司 | 2022-02-01 | — | — | CN | claimed |
| US-11094778-B2 | Capacitor with high work function interface layer | SK Hynix Inc. (KR) | 2021-08-17 | — | — | US | claimed |
| US-20110088739-A1 | HIGH EFFICIENCY THERMOELECTRIC CONVERTER | LOCKHEED MARTIN CORPORATION (US) | 2011-04-21 | — | — | US | claimed |
| US-7638836-B2 | Nonvolatile memory with backplate | SCHILTRON CORPORATION (US) | 2009-12-29 | — | — | US | claimed |
| US-7629212-B2 | Doped WGe to form dual metal gates | TEXAS INSTRUMENTS INCORPORATED (US) | 2009-12-08 | — | — | US | claimed |
| US-20080285349-A1 | NONVOLATILE MEMORY WITH BACKPLATE | WALKER, ANDREW JAN | 2008-11-20 | — | — | US | claimed |
| US-20080274598-A1 | Doped WGe to form dual metal gates | TEXAS INSTRUMENTS INC. | 2008-11-06 | — | — | US | claimed |
| WO-2008115937-A1 | DOPED WGE TO FORM DUAL METAL GATES | TEXAS INSTRUMENT INCORPORATED (US) | 2008-09-25 | — | — | WO | claimed |
| CN-1930079-A | Elongated nano-structures and related devices | GEN ELECTRIC (US) | 2007-03-14 | — | — | CN | claimed |
| CN-1613559-A | Preparation for hydrophobic solid acid catalyst | UNIV BEIJING CHEMICAL INDUSTRY (CN) | 2005-05-11 | — | — | CN | claimed |
| US-5162246-A | Shallow source and drain junction | NORTH CAROLINA STATE UNIVERSITY (US) | 1992-11-10 | — | — | US | claimed |
| US-5089872-A | Self-aligned germanium or refractory metal germanide contacts to source and drain | NORTH CAROLINA STATE UNIVERSITY | 1992-02-18 | — | — | US | claimed |