SCHEMBL6440690

SCHEMBL6440690

O=C(O)[SiH2]O[SiH2]C(=O)O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17163520 0.75
SCHEMBL1330354 0.67
SCHEMBL31241145 0.55
SCHEMBL1330128 0.55
SCHEMBL317865 0.55
SCHEMBL467802 0.55
Bicarbonate SCHEMBL1160878 0.55
Bicarbonate SCHEMBL15271537 0.52
Bicarbonate SCHEMBL1179 0.52
Bicarbonate SCHEMBL11066368 0.52 CA1 (1.00)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20030064154-A1 Low-K dielectric thin films and chemical vapor deposition method of making same ADVANCED TECHNOLOGY MATERIALS, INC. 2003-04-03 US claimed
WO-2003015129-A2 LOW-K DIELECTRIC THIN FILMS AND CHEMICAL VAPOR DEPOSITION METHOD OF MAKING SAME ADVANCED TECHNOLOGY MATERIAL, INC. (US) 2003-02-20 WO claimed
US-20020172766-A1 Low dielectric constant thin films and chemical vapor deposition method of making same ADVANCED TECHNOLOGY MATERIALS, INC. 2002-11-21 US claimed
US-20050038276-A1 Low dielectric constant thin films and chemical vapor deposition method of making same LAXMAN RAVI K (US) 2005-02-17 US disclosed
US-20030064154-A1 Low-K dielectric thin films and chemical vapor deposition method of making same ADVANCED TECHNOLOGY MATERIALS, INC. 2003-04-03 US disclosed
WO-2003015129-A2 LOW-K DIELECTRIC THIN FILMS AND CHEMICAL VAPOR DEPOSITION METHOD OF MAKING SAME ADVANCED TECHNOLOGY MATERIAL, INC. (US) 2003-02-20 WO disclosed
US-20020172766-A1 Low dielectric constant thin films and chemical vapor deposition method of making same ADVANCED TECHNOLOGY MATERIALS, INC. 2002-11-21 US disclosed