⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ethylene SCHEMBL11221138 | 0.89 | — | — | |
| Ethylene SCHEMBL3135482 | 0.87 | — | — | |
| Ethylene SCHEMBL105475 | 0.87 | — | — | |
| Ethylene SCHEMBL5144595 | 0.87 | — | — | |
| Ethylene SCHEMBL3945102 | 0.87 | — | — | |
| Ethylene SCHEMBL15121 | 0.87 | — | — | |
| Ethylene SCHEMBL42885 | 0.87 | — | — | |
| Ethylene SCHEMBL8567644 | 0.87 | — | — | |
| Ethylene SCHEMBL526684 | 0.87 | — | — | |
| Ethylene SCHEMBL1952662 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-102677110-B | A kind of rhotanium electroplate liquid and preparation method thereof and electroplating technology | 永保纳米科技(深圳)有限公司 | 2016-08-10 | — | — | CN | claimed |
| CN-102677110-A | Au-Pd alloy electroplating solution as well as preparation method and electroplating process thereof | YONGBAO NANO TECHNOLOGY SHENZHEN CO LTD | 2012-09-19 | — | — | CN | claimed |
| US-6875253-B2 | Metal alloy fine particles and method for producing thereof | HITACHI MAXELL, LTD. (JP) | 2005-04-05 | — | — | US | claimed |
| US-20040074336-A1 | Metal alloy fine particles and method for producing thereof | HITACHI MAXELL, LTD. (JP) | 2004-04-22 | — | — | US | claimed |
| CN-102677110-B | A kind of rhotanium electroplate liquid and preparation method thereof and electroplating technology | 永保纳米科技(深圳)有限公司 | 2016-08-10 | — | — | CN | disclosed |
| CN-102677110-A | Au-Pd alloy electroplating solution as well as preparation method and electroplating process thereof | YONGBAO NANO TECHNOLOGY SHENZHEN CO LTD | 2012-09-19 | — | — | CN | disclosed |
| US-6875253-B2 | Metal alloy fine particles and method for producing thereof | HITACHI MAXELL, LTD. (JP) | 2005-04-05 | — | — | US | disclosed |
| US-20040074336-A1 | Metal alloy fine particles and method for producing thereof | HITACHI MAXELL, LTD. (JP) | 2004-04-22 | — | — | US | disclosed |
| EP-0866735-B1 | PROCESS FOR THE FABRICATION OF A SILICON/INTEGRATED CIRCUIT WAFER | ENTHONE OMI INC (US) | 2002-10-02 | — | — | EP | disclosed |
| US-6379524-B1 | VACUUM DEPOSITION OF PALLADIUM AND TRANSITION METAL ON SUPPORT | KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) | 2002-04-30 | — | — | US | disclosed |
| US-6261637-B1 | SILICON INTEGRATED CIRCUIT WAFER COATED WITH DIELECTRIC | ENTHONE-OMI, INC. | 2001-07-17 | — | — | US | disclosed |
| EP-0866735-A4 | USE OF PALLADIUM IMMERSION DEPOSITION TO SELECTIVELY INITIATE ELECTROLESS PLATING ON Ti AND W ALLOYS FOR WAFER FABRICATION | ENTHONE OMI INC (US) | 1999-03-24 | — | — | EP | disclosed |
| EP-0866735-A1 | USE OF PALLADIUM IMMERSION DEPOSITION TO SELECTIVELY INITIATE ELECTROLESS PLATING ON Ti AND W ALLOYS FOR WAFER FABRICATION | ENTHONE-OMI, Inc. (US) | 1998-09-30 | — | — | EP | disclosed |
| WO-1997022419-A1 | USE OF PALLADIUM IMMERSION DEPOSITION TO SELECTIVELY INITIATE ELECTROLESS PLATING ON Ti AND W ALLOYS FOR WAFER FABRICATION | ENTHONE-OMI, INC. (US) | 1997-06-26 | — | — | WO | disclosed |