⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1263891 | 0.80 | — | — | |
| SCHEMBL1263879 | 0.80 | — | — | |
| SCHEMBL1263456 | 0.80 | — | — | |
| SCHEMBL1262682 | 0.80 | — | — | |
| SCHEMBL1263126 | 0.80 | — | — | |
| SCHEMBL1263429 | 0.80 | — | — | |
| SCHEMBL1263849 | 0.80 | — | — | |
| SCHEMBL1263875 | 0.80 | — | — | |
| SCHEMBL17536287 | 0.68 | — | — | |
| SCHEMBL17536341 | 0.66 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 820 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12618147-B2 | Methods for depositing phosphorus-doped silicon nitride films | APPLIED MATERIALS, INC. (US) | 2026-05-05 | — | — | US | claimed |
| US-20250327209-A1 | SYSTEMS, METHODS, AND VESSELS FOR EPITAXIAL DEPOSITIONS | ASM IP HOLDING BV (NL) | 2025-10-23 | — | — | US | claimed |
| US-12421620-B2 | Structures with boron- and gallium-doped silicon germanium layers and methods and systems for forming same | ASM IP HOLDING B.V. (NL) | 2025-09-23 | — | — | US | claimed |
| US-20250273464-A1 | METHOD FOR DEPOSITING BORON AND GALLIUM CONTAINING SILICON GERMANIUM LAYERS | ASM IP HOLDING B.V. (NL) | 2025-08-28 | — | — | US | claimed |
| US-20250263864-A1 | METHOD AND APPARATUS FOR LOW TEMPERATURE SELECTIVE EPITAXY IN A DEEP TRENCH | APPLIED MATERIALS, INC. | 2025-08-21 | — | — | US | claimed |
| US-12297559-B2 | Method and apparatus for low temperature selective epitaxy in a deep trench | APPLIED MATERIALS, INC. (US) | 2025-05-13 | — | — | US | claimed |
| US-20250079159-A1 | METHOD FOR IMPROVED SILICON DEPOSITION | ASM IP HOLDING B.V. (NL) | 2025-03-06 | — | — | US | claimed |
| CN-119542117-A | Method for improving silicon deposition | ASM IP私人控股有限公司 | 2025-02-28 | — | — | CN | claimed |
| WO-2025037113-A1 | ELECTROACTIVE MATERIALS FOR METAL-ION BATTERIES | NEXEON LIMITED (GB) | 2025-02-20 | — | — | WO | claimed |
| WO-2025032341-A1 | COMPOSITE PARTICLES | NEXEON LIMITED (GB) | 2025-02-13 | — | — | WO | claimed |
| CN-102225273-A | Preparation method and application of ultra-hydrophobic and ultra-lipophilic paper-based separating material | UNIV HUNAN NORMAL | 2011-10-26 | — | — | CN | claimed |
| CN-102171796-A | Methods for forming silicon nitride based film or silicon carbon based film | APPLIED MATERIALS INC | 2011-08-31 | — | — | CN | claimed |
| CN-102099108-A | Removal of impurities from hydrogen-containing materials | MATHESON TRI GAS INC | 2011-06-15 | — | — | CN | claimed |
| CN-102024880-A | Additives to silane for thin film silicon photovoltaic devices | AIR PROD & CHEM | 2011-04-20 | — | — | CN | claimed |
| CN-101970131-A | Method to create solar cell using multilayer high speed inkjet printing | SILEXOS INC | 2011-02-09 | — | — | CN | claimed |
| CN-100471991-C | Silicon-containing layer deposition with silicon compounds | APPLIED MATERIALS INC (US) | 2009-03-25 | — | — | CN | claimed |
| CN-101318776-A | Nano-film coating and photovoltaic power generation | SHANGHAI FUXIAN MATERIAL TECHN (CN) | 2008-12-10 | — | — | CN | claimed |
| CN-100392008-C | Silane composition, silicon film forming method and manufacture of solar cells | JSR CORP (JP) | 2008-06-04 | — | — | CN | claimed |
| CN-101097964-A | Thin film transistor, method of fabricating the same, and method of fabricating liquid crystal display device having the same | LG PHILIPS LCD CO LTD (KR) | 2008-01-02 | — | — | CN | claimed |
| CN-1407018-A | Silane composition, silicon film forming method and manufacture of solar cells | JSR CORP (JP) | 2003-04-02 | — | — | CN | claimed |