Methane

Methane

SCHEMBL64750

C.[N-]=[N+]=N.[N-]=[N+]=[N-]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL121695 0.94
SCHEMBL1560310 0.94 CA1 (0.86)
Methane SCHEMBL9054832 0.94
SCHEMBL5382582 0.94
SCHEMBL15864274 0.88 CA1 (0.75)
SCHEMBL4248879 0.88
SCHEMBL3243495 0.88 CA1 (0.75)
SCHEMBL16703451 0.88
SCHEMBL15864347 0.88 CA1 (0.75)
SCHEMBL15864291 0.88 CA1 (0.75)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 257 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240192591-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-13 US disclosed
US-12001139-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-04 US disclosed
US-20240176235-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-05-30 US disclosed
US-20240176238-A1 SULFONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-05-30 US disclosed
US-11994799-B2 Negative resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-05-28 US disclosed
US-20240160101-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-05-16 US disclosed
US-20240118615-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-04-11 US disclosed
US-20240118610-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-04-11 US disclosed
US-20240111212-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-04-04 US disclosed
US-20240103367-A1 Onium Salt, Acid Diffusion Inhibitor, Resist Composition, And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-03-28 US disclosed
US-7879530-B2 Antireflective coating composition, antireflective coating, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-02-01 US disclosed
US-20100178617-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-15 US disclosed
US-20100151381-A1 ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING , AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-17 US disclosed
US-20090253084-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-08 US disclosed
US-20090087799-A1 ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-02 US disclosed
US-7510820-B2 Resist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-31 US disclosed
US-20090053657-A1 PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20070122740-A1 Resist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed
US-6706826-B1 COMONOMERS COMPRISING ALICYCLIC AND LACTONE STRUCTURES; HYDROPHOBIC AND HEAT RESISTANCE, SOLVENT SOLUBILITY; PAINTS MITSUBISHI RAYON CO., LTD. (JP) 2004-03-16 US disclosed
EP-1074566-A1 COPOLYMER, PROCESS FOR PRODUCING THE SAME, AND RESIST COMPOSITION Mitsubishi Rayon Co., Ltd. (JP) 2001-02-07 EP disclosed