⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1262079 | 0.96 | — | — | |
| SCHEMBL649038 | 0.96 | — | — | |
| SCHEMBL647574 | 0.81 | — | — | |
| SCHEMBL6537024 | 0.81 | — | — | |
| SCHEMBL4294305 | 0.81 | — | — | |
| SCHEMBL4623694 | 0.81 | — | — | |
| SCHEMBL155223 | 0.81 | — | — | |
| SCHEMBL1263872 | 0.78 | — | — | |
| SCHEMBL8618233 | 0.76 | — | — | |
| SCHEMBL27551333 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 101 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240231230-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2024-07-11 | — | — | US | disclosed |
| US-11609499-B2 | Silicon-containing coating agent for pattern reversal | NISSAN CHEMICAL CORPORATION (JP) | 2023-03-21 | — | — | US | disclosed |
| US-11392037-B2 | Resist underlayer film forming composition containing silicone having cyclic amino group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2022-07-19 | — | — | US | disclosed |
| US-20220177653-A1 | FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2022-06-09 | — | — | US | disclosed |
| US-10910220-B2 | Planarization method for a semiconductor substrate using a silicon-containing composition | NISSAN CHEMICAL CORPORATION (JP) | 2021-02-02 | — | — | US | disclosed |
| US-10845703-B2 | Film-forming composition containing silicone having crosslinking reactivity | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2020-11-24 | — | — | US | disclosed |
| US-20190339618-A1 | SILICON-CONTAINING COATING AGENT FOR PATTERN REVERSAL | NISSAN CHEMICAL CORPORATION (JP) | 2019-11-07 | — | — | US | disclosed |
| US-20190292403-A1 | COATING COMPOSITION FOR PATTERN INVERSION | NISSAN CHEMICAL CORPORATION (JP) | 2019-09-26 | — | — | US | disclosed |
| US-10372039-B2 | Resist underlayer film forming composition containing silicon having ester group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2019-08-06 | — | — | US | disclosed |
| US-20190051518-A1 | PLANARIZATION METHOD FOR A SEMICONDUCTOR SUBSTRATE USING A SILICON-CONTAINING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2019-02-14 | — | — | US | disclosed |
| US-6828078-B2 | Photoresist for use in optoelectronic and display fields; porosity; optical fibers | JSR CORPORATION (JP) | 2004-12-07 | — | — | US | disclosed |
| US-6824833-B2 | STACKED DIELECTRIC | JSR CORPORATION (JP) | 2004-11-30 | — | — | US | disclosed |
| US-6787289-B2 | OPTICS | JSR CORPORATION (JP) | 2004-09-07 | — | — | US | disclosed |
| US-20040013972-A1 | Radiation-sensitive composition changing in refractive index and method of changing refractive index | JSR CORPORATION (JP) | 2004-01-22 | — | — | US | disclosed |
| US-20040005506-A1 | Composition having permitivity being radiation-sensitively changeable and method for forming permitivity pattern | JSR CORPORATION (JP) | 2004-01-08 | — | — | US | disclosed |
| US-6576393-B1 | Hydrolysate and/or a condensate of a siloxane compound; compound generating an acid by ultraviolet irradiation and/or heating; adhesion, resistance to a developing solution, decrease in film loss in oxygen ashing of the resist | JSR CORPORATION (JP) | 2003-06-10 | — | — | US | disclosed |
| US-20030077461-A1 | Stacked film, insulating film and substrate for semiconductor | JSR CORPORATION (JP) | 2003-04-24 | — | — | US | disclosed |
| US-6465368-B2 | DISSOLVING POLYMER IN SOLVENT; FORMING DIELECTRIC FILMS | JSR CORPORATION (JP) | 2002-10-15 | — | — | US | disclosed |
| US-6406794-B1 | POLYETHERSILOXANE COPOLYMER | JSR CORPORATION (JP) | 2002-06-18 | — | — | US | disclosed |
| US-20010051446-A1 | Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film | JSR CORPORATION (JP) | 2001-12-13 | — | — | US | disclosed |