SCHEMBL648335

SCHEMBL648335

CO[Si](OC)(c1ccccc1)[Si](OC)(OC)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA4 P22748 2/20 0.41
ESR1 P03372 1/20 0.37
ESR2 Q92731 1/20 0.37
CA12 O43570 1/20 0.36
CA1 P00915 1/20 0.36
CA2 P00918 1/20 0.36
CA7 P43166 1/20 0.36
CA9 Q16790 1/20 0.36
CA14 Q9ULX7 1/20 0.36
POLB P06746 2/20 0.36
ALDH1A1 P00352 3/20 0.35
LTA4H P09960 3/20 0.35
CYP1A2 P05177 1/20 0.35
CYP2C19 P33261 1/20 0.35
TSHR P16473 4/20 0.33
MAPK1 P28482 2/20 0.33
LMNA P02545 1/20 0.33
ALOX12 P18054 1/20 0.33
ACHE P22303 1/20 0.33
MEN1 O00255 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8414146 0.87 ESR1 (0.38) CA4ESR1ESR2CA12CA1
SCHEMBL7692319 0.87 CA4 (0.36) CA4ESR1ESR2CA12CA1
SCHEMBL645978 0.87 CA4 (0.36) CA4ESR1ESR2CA12CA1
SCHEMBL645230 0.87 CA4 (0.36) CA4ESR1ESR2CA12CA1
SCHEMBL8414396 0.85 CA4 (0.40) CA4ESR1ESR2CA12CA1
SCHEMBL8415032 0.85 ESR1 (0.37) CA4ESR1ESR2CA12CA1
SCHEMBL8412889 0.85 ESR1 (0.37) CA4ESR1ESR2CA12CA1
SCHEMBL8412770 0.85 ESR1 (0.37) CA4ESR1ESR2CA12CA1
SCHEMBL7803280 0.84 TSHR (0.33) CA4LTA4HTSHRACHE
SCHEMBL9697358 0.84 TSHR (0.33) CA4LTA4HTSHRACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 215 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7932295-B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2011-04-26 US claimed
US-7875317-B2 formed by hydrolyzing and condensing a siloxy compound in the presence of a polycarbosilane; low relative dielectric constant and excellent mechanical strength, storage stability, and chemical resistance; semiconductors JSR CORPORATION (JP) 2011-01-25 US claimed
US-20080246153-A1 ORGANIC SILICA-BASED FILM, METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING INSULATING FILM FOR SEMICONDUCTOR DEVICE, INTERCONNECT STRUCTURE, AND SEMICONDUCTOR DEVICE JSR CORPORATION (JP) 2008-10-09 US claimed
US-7399715-B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2008-07-15 US claimed
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
US-20160320705-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-11-03 US disclosed
US-9434609-B2 Method for forming pattern, and polysiloxane composition JSR CORPORATION (JP) 2016-09-06 US disclosed
US-9329478-B2 Polysiloxane composition and pattern-forming method JSR CORPORATION (JP) 2016-05-03 US disclosed
US-20160097978-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-04-07 US disclosed
US-9233840-B2 Method for improving self-assembled polymer features INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2016-01-12 US disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed
EP-0669363-B1 Process for preparing polyorganosilane TOSHIBA SILICONE (JP) 1999-08-18 EP disclosed
EP-0641820-B1 Organosilicon polymer and process for the preparation thereof TOSHIBA SILICONE (JP) 1998-08-12 EP disclosed
US-5633312-A Process for preparing polyorganosilane TOSHIBA SILICONE CO., LTD. (JP) 1997-05-27 US disclosed
US-5489662-A Process for the preparation of organosilicon polymer TOSHIBA SILICONE CO., LTD. (JP) 1996-02-06 US disclosed
EP-0669363-A2 Process for preparing polyorganosilane TOSHIBA SILICONE CO., LTD. (JP) 1995-08-30 EP disclosed
EP-0641820-A1 Process for the preparation of organosilicon polymer TOSHIBA SILICONE CO., LTD. (JP) 1995-03-08 EP disclosed