Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | C5AR1 | P21730 | 1/20 | 0.49 |
| ▸ | PTGES | O14684 | 2/20 | 0.42 |
| ▸ | ALOX5 | P09917 | 2/20 | 0.42 |
| ▸ | LTA4H | P09960 | 2/20 | 0.39 |
| ▸ | PTGDR2 | Q9Y5Y4 | 3/20 | 0.38 |
| ▸ | CYP2C8 | P10632 | 1/20 | 0.38 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.38 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.38 |
| ▸ | TAS2R14 | Q9NYV8 | 1/20 | 0.38 |
| ▸ | TSHR | P16473 | 6/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.38 |
| ▸ | GAA | P10253 | 1/20 | 0.38 |
| ▸ | HPGD | P15428 | 1/20 | 0.38 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.37 |
| ▸ | LMNA | P02545 | 1/20 | 0.36 |
| ▸ | PPARG | P37231 | 1/20 | 0.36 |
| ▸ | PPARA | Q07869 | 1/20 | 0.36 |
| ▸ | MAPT | P10636 | 3/20 | 0.36 |
| ▸ | MEN1 | O00255 | 2/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL650512 | 0.93 | C5AR1 (0.55) | C5AR1PTGDR2CYP2C8CYP2C9CYP2C19 | |
| SCHEMBL648085 | 0.93 | C5AR1 (0.46) | C5AR1PTGESALOX5PTGDR2CYP2C8 | |
| SCHEMBL651692 | 0.92 | C5AR1 (0.40) | C5AR1PTGESALOX5LTA4HPTGDR2 | |
| SCHEMBL1913102 | 0.90 | C5AR1 (0.52) | C5AR1PTGESALOX5LTA4HPTGDR2 | |
| SCHEMBL651019 | 0.89 | C5AR1 (0.53) | C5AR1TAS2R14TSHRALDH1A1HPGD | |
| SCHEMBL648636 | 0.89 | C5AR1 (0.51) | C5AR1PTGESALOX5LTA4HPTGDR2 | |
| SCHEMBL650916 | 0.89 | C5AR1 (0.58) | C5AR1PTGESALOX5LTA4HPTGDR2 | |
| SCHEMBL648848 | 0.88 | C5AR1 (0.51) | C5AR1PTGESALOX5LTA4HPTGDR2 | |
| SCHEMBL650282 | 0.88 | C5AR1 (0.51) | C5AR1PTGESALOX5LTA4HPTGDR2 | |
| SCHEMBL648818 | 0.88 | C5AR1 (0.62) | C5AR1TSHRALDH1A1HPGDLMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20220177653-A1 | FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2022-06-09 | — | — | US | disclosed |
| US-9946158-B2 | Composition for forming resist underlayer film for nanoimprint | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-04-17 | — | — | US | disclosed |
| US-9337052-B2 | Silicon-containing EUV resist underlayer film forming composition | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-05-10 | — | — | US | disclosed |
| US-20150099070-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT | NISSAN CHEMICAL IND LTD (JP) | 2015-04-09 | — | — | US | disclosed |
| US-8864894-B2 | Resist underlayer film forming composition containing silicone having onium group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-10-21 | — | — | US | disclosed |
| US-8815494-B2 | Resist underlayer film forming composition containing silicon having anion group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-08-26 | — | — | US | disclosed |
| US-20140232018-A1 | SILICON-CONTAINING EUV RESIST UNDERLAYER FILM FORMING COMPOSITION | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-08-21 | — | — | US | disclosed |
| US-20140127114-A1 | POROUS SILICA, OPTICAL-PURPOSE LAYERED PRODUCT AND COMPOSITION, AND METHOD FOR PRODUCING POROUS SILICA | MITSUBISHI CHEMICAL CORPORATION (JP) | 2014-05-08 | — | — | US | disclosed |
| US-8496849-B2 | Liquid crystal aligning agent, liquid crystal alignment film and liquid crystal display device | JSR CORPORATION (JP) | 2013-07-30 | — | — | US | disclosed |
| US-8450045-B2 | Pattern forming method | JSR CORPORATION (JP) | 2013-05-28 | — | — | US | disclosed |
| US-6828078-B2 | Photoresist for use in optoelectronic and display fields; porosity; optical fibers | JSR CORPORATION (JP) | 2004-12-07 | — | — | US | disclosed |
| US-6824833-B2 | STACKED DIELECTRIC | JSR CORPORATION (JP) | 2004-11-30 | — | — | US | disclosed |
| US-6787289-B2 | OPTICS | JSR CORPORATION (JP) | 2004-09-07 | — | — | US | disclosed |
| US-20040013972-A1 | Radiation-sensitive composition changing in refractive index and method of changing refractive index | JSR CORPORATION (JP) | 2004-01-22 | — | — | US | disclosed |
| US-20040005506-A1 | Composition having permitivity being radiation-sensitively changeable and method for forming permitivity pattern | JSR CORPORATION (JP) | 2004-01-08 | — | — | US | disclosed |
| US-6576393-B1 | Hydrolysate and/or a condensate of a siloxane compound; compound generating an acid by ultraviolet irradiation and/or heating; adhesion, resistance to a developing solution, decrease in film loss in oxygen ashing of the resist | JSR CORPORATION (JP) | 2003-06-10 | — | — | US | disclosed |
| US-20030077461-A1 | Stacked film, insulating film and substrate for semiconductor | JSR CORPORATION (JP) | 2003-04-24 | — | — | US | disclosed |
| US-6465368-B2 | DISSOLVING POLYMER IN SOLVENT; FORMING DIELECTRIC FILMS | JSR CORPORATION (JP) | 2002-10-15 | — | — | US | disclosed |
| US-6406794-B1 | POLYETHERSILOXANE COPOLYMER | JSR CORPORATION (JP) | 2002-06-18 | — | — | US | disclosed |
| US-20010051446-A1 | Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film | JSR CORPORATION (JP) | 2001-12-13 | — | — | US | disclosed |