SCHEMBL653913

SCHEMBL653913

[B].[Bi]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Lithium SCHEMBL31287262 0.82
Magnesium SCHEMBL32685261 0.82
Selenium SCHEMBL30475014 0.82
SCHEMBL2394344 0.82
SCHEMBL31069491 0.82
SCHEMBL5937318 0.82
Selenium SCHEMBL30475015 0.82
SCHEMBL8088010 0.71
SCHEMBL2730438 0.71
SCHEMBL11045828 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 90 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2025234951-A1 PROCESS FOR THE PRODUCTION OF POLYURETHANE CATALYST EGE Kimya San. ve Tic. A.S. (TR) 2025-11-13 WO claimed
CN-113980056-B Boron bismuth element-based thermal activation delay fluorescent material, preparation method thereof and organic light-emitting diode 北京大学深圳研究生院 2024-06-07 CN claimed
CN-115340103-A Boron alkene-bismuth alkene derived micro-nano topological structure flexible electrode, preparation method and application thereof 安徽大学 2022-11-15 CN claimed
CN-115180831-A Lead-free alkali-resistant glass glaze 贾佳 2022-10-14 CN claimed
US-20220069150-A1 NON-CONTACTING THICK-FILM BUSBAR PASTES FOR CRYSTALLINE SILICON SOLAR CELL EMITTER SURFACES Jiangxi Jiayin Science and Technology, Ltd. (CN) 2022-03-03 US claimed
CN-113980056-A Thermal activation delayed fluorescent material based on boron-bismuth element, preparation method thereof and organic light-emitting diode 北京大学深圳研究生院 2022-01-28 CN claimed
CN-113832491-A Preparation method capable of realizing bismuth-boron-based flexible catalytic electrode in organic phase 上海理工大学 2021-12-24 CN claimed
CN-101759431-B Zinc oxide piezoresistor material with low electric potential gradient and preparation method thereof UNIV HUAZHONG SCIENCE TECH 2012-01-25 CN claimed
US-20110146845-A1 FLUX AND METHOD FOR THE REDUCTION OF OXIDE LAYERS ON METALLIC SURFACES KS ALUMINIUM-TECHNOLOGIE GMBH (DE) 2011-06-23 US claimed
CN-101508526-B Bismuth doped germanium-zinc-boron glass and method of producing the same UNIV KUNMING SCIENCE & TECHNOLOGY 2011-06-08 CN claimed
CN-101759431-A Zinc oxide piezoresistor material with low electric potential gradient and preparation method thereof UNIV HUAZHONG SCIENCE TECH 2010-06-30 CN claimed
CN-101508526-A Bismuth doped germanium-zinc-boron glass and method of producing the same UNIV KUNMING TECHNOLOGY (CN) 2009-08-19 CN claimed
CN-101503276-A Bismuth doped strontium-aluminum-boron based optical glass and preparation thereof UNIV KUNMING SCIENCE & TECHNOLOGY (CN) 2009-08-12 CN claimed
WO-2025234951-A1 PROCESS FOR THE PRODUCTION OF POLYURETHANE CATALYST EGE Kimya San. ve Tic. A.S. (TR) 2025-11-13 WO disclosed
CN-120280202-B Aluminum paste for overprinting BC battery silver grid line, preparation method and BC battery grid line 南通天盛新能源股份有限公司 2025-08-26 CN disclosed
CN-120280202-A Aluminum paste for overprinting BC battery silver grid line, preparation method and BC battery grid line 南通天盛新能源股份有限公司 2025-07-08 CN disclosed
CN-101759431-A Zinc oxide piezoresistor material with low electric potential gradient and preparation method thereof UNIV HUAZHONG SCIENCE TECH 2010-06-30 CN disclosed
CN-101508520-A Bismuth doped phosphosilicate glass and method of producing the same UNIV KUNMING TECHNOLOGY (CN) 2009-08-19 CN disclosed
CN-101508521-A Bismuth doped ZBS glass and method of producing the same UNIV KUNMING TECHNOLOGY (CN) 2009-08-19 CN disclosed
CN-101503276-A Bismuth doped strontium-aluminum-boron based optical glass and preparation thereof UNIV KUNMING SCIENCE & TECHNOLOGY (CN) 2009-08-12 CN disclosed