⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL58777 | 0.76 | — | — | |
| SCHEMBL29016 | 0.76 | — | — | |
| Hydrochloric Acid SCHEMBL586751 | 0.68 | — | — | |
| SCHEMBL17202621 | 0.68 | — | — | |
| SCHEMBL20240849 | 0.68 | — | — | |
| Methane SCHEMBL23070747 | 0.68 | — | — | |
| SCHEMBL9223832 | 0.68 | — | — | |
| Ammonia Solution, Strong SCHEMBL23701214 | 0.68 | — | — | |
| Helium SCHEMBL20953787 | 0.68 | — | — | |
| Hydrochloric Acid SCHEMBL8386129 | 0.68 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-117403319-A | Method for preparing monocrystalline silicon carbide crystal for chip from alkylsilane | 保定市北方特种气体有限公司 | 2024-01-16 | — | — | CN | disclosed |
| CN-104136447-B | The purification process of trimethyl silane | CENTRAL GLASS CO.,LTD. (JP) | 2016-04-13 | — | — | CN | disclosed |
| EP-1373595-A1 | METHOD FOR PRODUCING HYDROGENATED SILICON OXYCARBIDE FILMS | Dow Corning Corporation (US) | 2004-01-02 | — | — | EP | disclosed |
| US-6593248-B2 | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant | DOW CORNING CORPORATION | 2003-07-15 | — | — | US | disclosed |
| US-6541842-B2 | Metal barrier behavior by SiC:H deposition on porous materials | DOW CORNING CORPORATION | 2003-04-01 | — | — | US | disclosed |
| WO-2003005438-A2 | IMPROVED METAL BARRIER BEHAVIOR BY SIC:H DEPOSITION ON POROUS MATERIALS | DOW CORNING CORPORATION (US) | 2003-01-16 | — | — | WO | disclosed |
| US-20030001282-A1 | METAL BARRIER BEHAVIOR BY SIC:H DEPOSITION ON POROUS MATERIALS | DOW CORNING CORPORATION | 2003-01-02 | — | — | US | disclosed |
| US-20020173172-A1 | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant | DOW CORNING CORPORATION | 2002-11-21 | — | — | US | disclosed |
| WO-2002077320-A1 | METHOD FOR PRODUCING HYDROGENATED SILICON OXYCARBIDE FILMS | DOW CORNING CORPORATION (US) | 2002-10-03 | — | — | WO | disclosed |