⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28484490 | 0.71 | — | — | |
| SCHEMBL8161134 | 0.67 | — | — | |
| SCHEMBL20531241 | 0.67 | — | — | |
| SCHEMBL15091890 | 0.67 | — | — | |
| SCHEMBL1052909 | 0.62 | — | — | |
| SCHEMBL10337117 | 0.62 | — | — | |
| SCHEMBL31302755 | 0.61 | — | — | |
| SCHEMBL4525392 | 0.59 | — | — | |
| SCHEMBL703540 | 0.59 | — | — | |
| SCHEMBL11796094 | 0.59 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111302968-B | Synthesis method of amide nitrogen trifluoromethyl compound | 中国科学院上海有机化学研究所 | 2021-06-08 | — | — | CN | claimed |
| CN-109972165-B | Electrochemical preparation method of β -trifluoromethyl amide compound | 五邑大学 | 2020-07-17 | — | — | CN | claimed |
| CN-111302968-A | Synthesis method of amide nitrogen trifluoromethyl compound | 中国科学院上海有机化学研究所 | 2020-06-19 | — | — | CN | claimed |
| CN-101601103-A | Gaseous Dielectrics with Low Global Warming Potential | HONEYWELL INT INC (US) | 2009-12-09 | — | — | CN | claimed |
| WO-2025121309-A1 | ETCHING METHOD | 株式会社レゾナック | 2025-06-12 | — | — | WO | disclosed |
| WO-2024258914-A1 | PRECURSORS FOR LOW DIELECTRIC FILM DEPOSITION | LAM RESEARCH CORPORATION (US) | 2024-12-19 | — | — | WO | disclosed |
| CN-117821020-B | Composite cooling medium composition and preparation method and application thereof | 润威新材料科技(上海)有限公司 | 2024-08-16 | — | — | CN | disclosed |
| CN-118356992-A | Inertial microfluidic chip, system and method for cell sorting | 南方科技大学 | 2024-07-19 | — | — | CN | disclosed |
| CN-117821020-A | Composite cooling medium composition and preparation method and application thereof | 润威新材料科技(上海)有限公司 | 2024-04-05 | — | — | CN | disclosed |
| US-11220584-B2 | Protective coating system for plastic substrate | PPG INDUSTRIES OHIO, INC. (US) | 2022-01-11 | — | — | US | disclosed |
| CN-111302968-B | Synthesis method of amide nitrogen trifluoromethyl compound | 中国科学院上海有机化学研究所 | 2021-06-08 | — | — | CN | disclosed |
| US-20200299535-A1 | PROTECTIVE COATING SYSTEM FOR PLASTIC SUBSTRATE | PPG INDUSTRIES OHIO, INC. | 2020-09-24 | — | — | US | disclosed |
| US-6541842-B2 | Metal barrier behavior by SiC:H deposition on porous materials | DOW CORNING CORPORATION | 2003-04-01 | — | — | US | disclosed |
| WO-2003005438-A2 | IMPROVED METAL BARRIER BEHAVIOR BY SIC:H DEPOSITION ON POROUS MATERIALS | DOW CORNING CORPORATION (US) | 2003-01-16 | — | — | WO | disclosed |
| US-20030001282-A1 | METAL BARRIER BEHAVIOR BY SIC:H DEPOSITION ON POROUS MATERIALS | DOW CORNING CORPORATION | 2003-01-02 | — | — | US | disclosed |
| US-20020173172-A1 | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant | DOW CORNING CORPORATION | 2002-11-21 | — | — | US | disclosed |
| WO-2002077320-A1 | METHOD FOR PRODUCING HYDROGENATED SILICON OXYCARBIDE FILMS | DOW CORNING CORPORATION (US) | 2002-10-03 | — | — | WO | disclosed |
| US-6458718-B1 | PROVIDING A SUBSTRATE; PROVIDING A CHEMICAL PRECURSOR OF THE FORMULA (F3C)4-M-NMXMRN, WHEREIN M IS SILICON OR GERMENIUM, X IS HALOGEN, R IS HYDROGEN OR D, ACTIVATING THE PRECURSOR TO DEPOSIT A FLUORINE CONTAINING MATERIAL ONTO THE SUBSTRATE | ASM JAPAN K.K. (JP) | 2002-10-01 | — | — | US | disclosed |
| US-20020045359-A1 | Fluorine-containing materials and processes | ASM JAPAN K.K. (JP) | 2002-04-18 | — | — | US | disclosed |
| EP-1150345-A2 | Fluorine-containing materials and processes | ASM JAPAN K.K. (JP) | 2001-10-31 | — | — | EP | disclosed |