⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL8565930 | 0.76 | — | — | |
| Hydrochloric Acid SCHEMBL8565933 | 0.72 | — | — | |
| Hydrochloric Acid SCHEMBL8565923 | 0.72 | — | — | |
| Hydrochloric Acid SCHEMBL8570534 | 0.69 | — | — | |
| Bromide SCHEMBL7785498 | 0.69 | — | — | |
| SCHEMBL8671690 | 0.68 | — | — | |
| SCHEMBL8381024 | 0.67 | — | — | |
| SCHEMBL19292144 | 0.66 | — | — | |
| SCHEMBL16667087 | 0.65 | — | — | |
| Bromide SCHEMBL7785505 | 0.64 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12305279-B2 | Ultra high-k hafnium oxide and hafnium zirconium oxide films | APPLIED MATERIALS, INC. (US) | 2025-05-20 | — | — | US | claimed |
| US-20240301552-A1 | ULTRA HIGH-K HAFNIUM OXIDE AND HAFNIUM ZIRCONIUM OXIDE FILMS | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA | 2024-09-12 | — | — | US | claimed |
| US-20220115232-A1 | METHODS FOR DEPOSITING A TRANSITION METAL CHALCOGENIDE FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS | ASM IP HOLDING B.V. (NL) | 2022-04-14 | — | — | US | claimed |
| US-11244825-B2 | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process | ASM IP HOLDING B.V. (NL) | 2022-02-08 | — | — | US | claimed |
| US-20210005450-A1 | METHODS FOR DEPOSITING A TRANSITION METAL CHALCOGENIDE FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS | ASM IP HOLDING B.V. (NL) | 2021-01-07 | — | — | US | claimed |
| US-10847366-B2 | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process | ASM IP HOLDING B.V. (NL) | 2020-11-24 | — | — | US | claimed |
| US-20200339446-A1 | COMPRESSIBLE FOAM ELECTRODE | UCHICAGO ARGONNE, LLC (US) | 2020-10-29 | — | — | US | claimed |
| US-20200161129-A1 | METHODS FOR DEPOSITING A TRANSITION METAL CHALCOGENIDE FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS | ASM IP HOLDING B.V. (NL) | 2020-05-21 | — | — | US | claimed |
| US-20120046421-A1 | Ordered Nanoscale Domains by Infiltration of Block Copolymers | UCHICAGO ARGONNE, LLC | 2012-02-23 | — | — | US | claimed |
| US-20260077458-A1 | METHODS AND SYSTEMS FOR DEPOSITION TO GAPS USING AN INHIBITOR | ASM IP HOLDING BV (NL) | 2026-03-19 | — | — | US | disclosed |
| US-12571093-B2 | Selective deposition of silicon oxide on metal surfaces | ASM IP HOLDING B.V. (NL) | 2026-03-10 | — | — | US | disclosed |
| US-20260020322-A1 | OPTIMIZATION OF BOTTOM ELECTRODE FOR THE ENHANCEMENT OF FERROELECTRIC PERFORMANCE IN HAFNIA-BASED OXIDE WITH BACK-END-OF-LINE (BEOL) COMPATIBLE PROCESS | VERSUM MAT US LLC (US) | 2026-01-15 | — | — | US | disclosed |
| US-12492472-B2 | Methods for depositing material within a gap using an inhibitor | ASM IP HOLDING B.V. (NL) | 2025-12-09 | — | — | US | disclosed |
| EP-4541155-A1 | OPTIMIZATION OF BOTTOM ELECTRODE FOR THE ENHANCEMENT OF FERROELECTRIC PERFORMANCE IN HAFNIA-BASED OXIDE WITH BACK-END-OF-LINE (BEOL) COMPATIBLE PROCESS | Versum Materials US, LLC (US) | 2025-04-23 | — | — | EP | disclosed |
| US-9525019-B2 | Method for manufacturing a polycrystalline dielectric layer | STMICROELECTRONICS (CROLLES 2) SAS (FR) | 2016-12-20 | — | — | US | disclosed |
| US-8667654-B2 | Method for manufacturing a polycrystalline dielectric layer | STMICROELECTRONICS (CROLLES 2) SAS | 2014-03-11 | — | — | US | disclosed |
| US-20140021586-A1 | METHOD FOR MANUFACTURING A POLYCRYSTALLINE DIELECTRIC LAYER | STMICROELECTRONICS (CROLLES 2) SAS (FR) | 2014-01-23 | — | — | US | disclosed |
| US-20120170170-A1 | METHOD FOR MANUFACTURING A POLYCRYSTALLINE DIELECTRIC LAYER | STMICROELECTRONICS (CROLLES 2) SAS (FR) | 2012-07-05 | — | — | US | disclosed |
| EP-2382959-A2 | Nano-crystalline dental ceramics | James R. Glidewell Dental Ceramics, Inc. (US) | 2011-11-02 | — | — | EP | disclosed |
| US-20090320771-A1 | IONIC LIQUID MEDIUMS FOR HOLDING SOLID PHASE PROCESS GAS PRECURSORS | MATHESON TRI-GAS (US) | 2009-12-31 | — | — | US | disclosed |