⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10390376 | 0.76 | — | — | |
| SCHEMBL7923511 | 0.70 | — | — | |
| SCHEMBL714797 | 0.70 | — | — | |
| SCHEMBL10390244 | 0.68 | — | — | |
| SCHEMBL2426984 | 0.68 | — | — | |
| Hydrochloric Acid SCHEMBL7918834 | 0.68 | — | — | |
| SCHEMBL8374668 | 0.68 | — | — | |
| SCHEMBL10390027 | 0.68 | — | — | |
| SCHEMBL10390106 | 0.68 | — | — | |
| SCHEMBL9224200 | 0.68 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 231 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4743602-A1 | FORMULATIONS FOR SELECTIVE DEPOSITION | Merck Patent GmbH (DE) | 2026-05-20 | — | — | EP | claimed |
| US-12261037-B2 | Tunability of dopant concentration in thin hafnium oxide films | APPLIED MATERIALS, INC. (US) | 2025-03-25 | — | — | US | claimed |
| CN-112313775-B | Tunability of dopant concentration in thin hafnium oxide films | 应用材料公司 | 2025-02-25 | — | — | CN | claimed |
| WO-2025036804-A1 | FORMULATIONS FOR SELECTIVE DEPOSITION | MERCK PATENT GMBH (DE) | 2025-02-20 | — | — | WO | claimed |
| CN-119306771-A | Synthesis method of tri (isopropyl cyclopentadienyl) lanthanum | 安徽亚格盛电子新材料股份有限公司 | 2025-01-14 | — | — | CN | claimed |
| CN-118742531-A | High purity alkynes for selective deposition | 默克专利股份有限公司 | 2024-10-01 | — | — | CN | claimed |
| WO-2024097547-A1 | HIGH PURITY ALKYNYL AMINES FOR SELECTIVE DEPOSITION | VERSUM MATERIALS US, LLC (US) | 2024-05-10 | — | — | WO | claimed |
| CN-117954608-A | Positive electrode material, preparation method thereof, positive electrode plate, lithium ion battery and electric equipment | 天津巴莫科技有限责任公司 | 2024-04-30 | — | — | CN | claimed |
| EP-4315395-A1 | ENCAPSULATION LAYER FOR CHALCOGENIDE MATERIAL | Eugenus, Inc. (US) | 2024-02-07 | — | — | EP | claimed |
| CN-117501410-A | Encapsulation layer for chalcogenide material | 尤金纳斯股份有限公司 | 2024-02-02 | — | — | CN | claimed |
| US-20110034038-A1 | Methods and devices for forming nanostructure monolayers and devices including such monolayers | NANOSYS, INC. (US) | 2011-02-10 | — | — | US | claimed |
| EP-2220266-A1 | SOLUTION BASED LANTHANUM PRECURSORS FOR ATOMIC LAYER DEPOSITION | Linde Aktiengesellschaft (DE) | 2010-08-25 | — | — | EP | claimed |
| WO-2010065304-A1 | CONTAINER FOR PRECURSORS USED IN DEPOSITION PROCESSES | LINDE LLC (US) | 2010-06-10 | — | — | WO | claimed |
| US-20100140120-A1 | CONTAINER FOR PRECURSORS USED IN DEPOSITION PROCESSES | LINDE GAS NORTH AMERICA LLC | 2010-06-10 | — | — | US | claimed |
| WO-2009061668-A1 | SOLUTION BASED LANTHANUM PRECURSORS FOR ATOMIC LAYER DEPOSITION | LINDE NORTH AMERICA, INC. (US) | 2009-05-14 | — | — | WO | claimed |
| US-20090117274-A1 | SOLUTION BASED LANTHANUM PRECURSORS FOR ATOMIC LAYER DEPOSITION | LINDE NORTH AMERICA, INC. | 2009-05-07 | — | — | US | claimed |
| EP-2052407-A2 | METHODS AND DEVICES FOR FORMING NANOSTRUCTURE MONOLAYERS AND DEVICES INCLUDING SUCH MONOLAYERS | Nanosys, Inc. (US) | 2009-04-29 | — | — | EP | claimed |
| WO-2008013959-A2 | METHODS AND DEVICES FOR FORMING NANOSTRUCTURE MONOLAYERS AND DEVICES INCLUDING SUCH MONOLAYERS | NANOSYS, INC. (US) | 2008-01-31 | — | — | WO | claimed |
| US-20070032091-A1 | Methods and devices for forming nanostructure monolayers and devices including such monolayers | NANOSYS, INC. (US) | 2007-02-08 | — | — | US | claimed |
| US-20060072281-A1 | Methods of forming a layer utilizing a liquid-phase lanthanum precursor and methods of manufacturing a capacitor using the same | SAMSUNG ELECTRONICS CO., LTD. | 2006-04-06 | — | — | US | claimed |