⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Silicate SCHEMBL21111528 | 0.94 | — | — | |
| Silicate SCHEMBL6045704 | 0.94 | — | — | |
| Silicate SCHEMBL8459578 | 0.94 | — | — | |
| Silicate SCHEMBL5513074 | 0.88 | — | — | |
| Silicate SCHEMBL22687582 | 0.88 | — | — | |
| Silicate SCHEMBL11476016 | 0.88 | — | — | |
| Silicate SCHEMBL1369333 | 0.88 | — | — | |
| Silicate SCHEMBL721478 | 0.88 | — | — | |
| Silicate SCHEMBL1370086 | 0.88 | — | — | |
| Silicate SCHEMBL663686 | 0.88 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10971602-B2 | High-k metal gate process and device | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-04-06 | — | — | US | claimed |
| US-20200251574-A1 | High-K Metal Gate Process and Device | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-08-06 | — | — | US | claimed |
| US-9209315-B2 | Nonvolatile semiconductor memory device and production method for the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2015-12-08 | — | — | US | claimed |
| US-20150048436-A1 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND PRODUCTION METHOD FOR THE SAME | KABUSHIKI KAISHA TOSHIBA (JP) | 2015-02-19 | — | — | US | claimed |
| US-8884354-B2 | Nonvolatile semiconductor memory device and production method for the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2014-11-11 | — | — | US | claimed |
| US-20130015518-A1 | SEMICONDUCTOR MEMORY DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2013-01-17 | — | — | US | claimed |
| US-20120193699-A1 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND PRODUCTION METHOD FOR THE SAME | KABUSHIKI KAISHA TOSHIBA (JP) | 2012-08-02 | — | — | US | claimed |
| US-7727911-B2 | Method for forming a gate insulating film | PANASONIC CORPORATION (JP) | 2010-06-01 | — | — | US | claimed |
| US-20090181549-A1 | METHOD FOR FORMING A GATE INSULATING FILM | RPX CORPORATION | 2009-07-16 | — | — | US | claimed |
| WO-2008064246-A2 | METHOD OF CLUSTERING SEQUENTIAL PROCESSING FOR A GATE STACK STRUCTURE | APPLIED MATERIALS, INC. (US) | 2008-05-29 | — | — | WO | claimed |
| US-20080119057-A1 | METHOD OF CLUSTERING SEQUENTIAL PROCESSING FOR A GATE STACK STRUCTURE | APPLIED MATERIALS,INC. | 2008-05-22 | — | — | US | claimed |
| US-11515169-B2 | Method of making a semiconductor device including etching of a metal silicate using sequential and cyclic application of reactive gases | HITACHI HIGH-TECH CORPORATION (JP) | 2022-11-29 | — | — | US | disclosed |
| US-20210335622-A1 | SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | HITACHI HIGH TECH CORP (JP) | 2021-10-28 | — | — | US | disclosed |
| US-10971602-B2 | High-k metal gate process and device | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-04-06 | — | — | US | disclosed |
| US-10804098-B2 | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species | ASM IP HOLDING B.V. (NL) | 2020-10-13 | — | — | US | disclosed |
| US-20090181549-A1 | METHOD FOR FORMING A GATE INSULATING FILM | RPX CORPORATION | 2009-07-16 | — | — | US | disclosed |
| US-20090114996-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | KABUSHIKI KAISHA TOSHIBA (JP) | 2009-05-07 | — | — | US | disclosed |
| WO-2008064246-A2 | METHOD OF CLUSTERING SEQUENTIAL PROCESSING FOR A GATE STACK STRUCTURE | APPLIED MATERIALS, INC. (US) | 2008-05-29 | — | — | WO | disclosed |
| US-20080119057-A1 | METHOD OF CLUSTERING SEQUENTIAL PROCESSING FOR A GATE STACK STRUCTURE | APPLIED MATERIALS,INC. | 2008-05-22 | — | — | US | disclosed |
| US-20060081948-A1 | Transistors with multilayered dielectric films and methods of manufacturing such transistors | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-04-20 | — | — | US | disclosed |