SCHEMBL667834

SCHEMBL667834

CN(C)[Si](CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)(N(C)C)N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL650289 1.00
SCHEMBL5011703 0.98
SCHEMBL30238532 0.82
SCHEMBL30238533 0.82
SCHEMBL18917446 0.82
SCHEMBL30239429 0.82
SCHEMBL650478 0.82
SCHEMBL668024 0.82
SCHEMBL18917084 0.80
SCHEMBL10031079 0.79

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8987029-B2 Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures APPLIED MICROSTRUCTURES, INC. (US) 2015-03-24 US disclosed
US-8425789-B2 Method and apparatus for anisotropic etching ROLITH, INC. (US) 2013-04-23 US disclosed
US-8334217-B2 Material deposition over template ROLITH INC. (US) 2012-12-18 US disclosed
US-8318386-B2 Fabrication of nanostructured devices ROLITH INC. (US) 2012-11-27 US disclosed
US-8192920-B2 Lithography method ROLITH INC. (US) 2012-06-05 US disclosed
US-20120045884-A1 PROTECTIVE THIN FILMS FOR USE DURING FABRICATION OF SEMICONDUCTORS, MEMS, AND MICROSTRUCTURES SPTS TECHNOLOGIES LIMITED (GB) 2012-02-23 US disclosed
US-8067258-B2 Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures APPLIED MICROSTRUCTURES, INC. (US) 2011-11-29 US disclosed
US-20100173494-A1 Method and apparatus for anisotropic etching ROLITH, INC (US) 2010-07-08 US disclosed
US-7745102-B2 Immersion fluids for lithography MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2010-06-29 US disclosed
US-20100035163-A1 Fabrication of nanostructured devices ROLITH, INC. (US) 2010-02-11 US disclosed
US-20090305513-A1 Material deposition over template ROLITH, INC. (US) 2009-12-10 US disclosed
US-20090269705-A1 Lighography method ROLITH, INC (US) 2009-10-29 US disclosed
US-20080063989-A1 IMMERSION FLUIDS FOR LITHOGRAPHY MASS INSTITUTE OF TECHNOLOGY (US) 2008-03-13 US disclosed
US-20070281492-A1 Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures APPLIED MICROSTRUCTURES, INC. 2007-12-06 US disclosed
US-7045170-B1 Anti-stiction coating for microelectromechanical devices SANDIA CORPORATION (US) 2006-05-16 US disclosed