⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29373948 | 0.93 | — | — | |
| SCHEMBL1286160 | 0.86 | — | — | |
| SCHEMBL8780986 | 0.86 | — | — | |
| SCHEMBL4382487 | 0.84 | — | — | |
| SCHEMBL17264 | 0.84 | — | — | |
| SCHEMBL108163 | 0.84 | — | — | |
| SCHEMBL1665960 | 0.77 | — | — | |
| SCHEMBL9775305 | 0.77 | — | — | |
| Water SCHEMBL10760074 | 0.77 | — | — | |
| SCHEMBL4253757 | 0.77 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-102426871-B | Composition for forming a thick film conductor, the thick film conductor obtained by using the same and the chip resistor using the same | SUMITOMO METAL MINING CO | 2015-07-01 | — | — | CN | disclosed |
| US-20040196620-A1 | Dielectric laminate for a capacitor | SHIPLEY COMPANY, L.L.C. | 2004-10-07 | — | — | US | disclosed |
| US-6728092-B2 | Formation of thin film capacitors | SHIPLEY-COMPANY, L.L.C. | 2004-04-27 | — | — | US | disclosed |
| CN-1384512-A | Laminated dielectrical sheet for capacity and its production process | HIPRAY CORP (US) | 2002-12-11 | — | — | CN | disclosed |
| US-20020176989-A1 | Dielectric laminate for a capacitor | SHIPLEY COMPANY, L.L.C. | 2002-11-28 | — | — | US | disclosed |
| EP-1251530-A2 | Dielectric laminate for a capacitor | Shipley Company LLC (US) | 2002-10-23 | — | — | EP | disclosed |
| US-20020145845-A1 | Formation of thin film capacitors | MICROCOATING TECHNOLOGIES OF (US) | 2002-10-10 | — | — | US | disclosed |
| US-6433993-B1 | MULTILAYER; FLEXIBLE METAL LAYER, DIELECTRICS, BARRIER; COMBUSTION VAPOR DEPOSITION | MICROCOATING TECHNOLOGIES, INC. | 2002-08-13 | — | — | US | disclosed |
| US-6270835-B1 | PROVIDING THREE-LAYER STRUCTURE COMPRISING DIELECTRIC LAYER AND ELECTRICALLY CONDUCTIVE LAYERS; PATTERNING ELECTRICALLY CONDUCTIVE LAYER TO FORM STRUCTURE; EMBEDDING INTO SECOND DIELECTRIC MATERIAL; PATTERNING ELECTRICALLY CONDUCTIVE LAYER | MICROCOATING TECHNOLOGIES, INC. | 2001-08-07 | — | — | US | disclosed |
| US-6207522-B1 | Formation of thin film capacitors | MICROCOATING TECHNOLOGIES | 2001-03-27 | — | — | US | disclosed |
| EP-1005260-A2 | Formation of thin film capacitors | MicroCoating Technologies, Inc. (US) | 2000-05-31 | — | — | EP | disclosed |