SCHEMBL6721045

SCHEMBL6721045

CN(C(c1ccc(C(=O)Oc2ccccc2)cc1)C(C)(C)C)C(C)(C)C

nearest known ligand 0.52

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
MAPT P10636 3/20 0.52
L3MBTL1 Q9Y468 2/20 0.52
TDP1 Q9NUW8 1/20 0.52
SMN1; SMN2 Q16637 1/20 0.51
KMT2A Q03164 2/20 0.49
ALDH1A1 P00352 2/20 0.49
PKM P14618 1/20 0.49
ATM Q13315 1/20 0.46
PARP10 Q53GL7 1/20 0.44
PRSS1 P07477 3/20 0.43
ACR P10323 3/20 0.43
TMPRSS15 P98073 2/20 0.43
MEN1 O00255 1/20 0.43
SLC6A2 P23975 1/20 0.43
SLC6A4 P31645 1/20 0.43
SLC6A3 Q01959 1/20 0.43
NSD2 O96028 1/20 0.41
HTT P42858 1/20 0.40
ELANE P08246 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16300515 0.88 MAPT (0.51) MAPTL3MBTL1TDP1SMN1; SMN2KMT2A
SCHEMBL16300522 0.85 MAPT (0.49) MAPTL3MBTL1TDP1SMN1; SMN2KMT2A
SCHEMBL6721112 0.84 MAPT (0.48) MAPTL3MBTL1TDP1SMN1; SMN2KMT2A
SCHEMBL8422497 0.79 PRSS1 (0.61) MAPTL3MBTL1TDP1SMN1; SMN2KMT2A
SCHEMBL10170136 0.77 AOC3 (0.41) L3MBTL1TDP1KMT2AALDH1A1ATM
SCHEMBL1790578 0.76 MAPT (0.87) MAPTL3MBTL1TDP1SMN1; SMN2KMT2A
SCHEMBL678424 0.76 MAPT (0.70) MAPTL3MBTL1TDP1SMN1; SMN2KMT2A
SCHEMBL70034 0.74 PARP10 (0.70) MAPTL3MBTL1TDP1SMN1; SMN2KMT2A
SCHEMBL5706144 0.74 MAPT (0.68) MAPTL3MBTL1TDP1SMN1; SMN2KMT2A
SCHEMBL548358 0.74 MAPT (0.68) MAPTL3MBTL1TDP1SMN1; SMN2KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8182975-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-05-22 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed