SCHEMBL6744299

SCHEMBL6744299

COC(=O)C(C)CCO

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12447225 1.00
Ammonia Solution, Strong SCHEMBL27774284 0.98 SMN1; SMN2 (0.39)
SCHEMBL7105090 0.87 SMN1; SMN2 (0.46)
SCHEMBL27279809 0.86 CA1 (0.41)
SCHEMBL18098081 0.84 ZDHHC7 (0.41)
SCHEMBL13640440 0.82 CA1 (0.45)
SCHEMBL15314124 0.80
SCHEMBL7707505 0.80 SMN1; SMN2 (0.41)
SCHEMBL6744296 0.80
SCHEMBL184608 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110391440-B Polymer proton exchange membrane and preparation method thereof 深圳质子航新能源科技有限公司 2021-03-30 CN claimed
CN-101145513-B Method for forming fine pattern of semiconductor device HYNIX SEMICONDUCTOR INC 2011-11-02 CN claimed
CN-100501919-C Method for forming fine pattern of semiconductor device HYNIX SEMICONDUCTOR INC (KR) 2009-06-17 CN claimed
CN-101145513-A Method for forming fine pattern of semiconductor device HYNIX SEMICONDUCTOR INC (KR) 2008-03-19 CN claimed
CN-101140854-A Method for forming fine pattern of semiconductor device HYNIX SEMICONDUCTOR INC (KR) 2008-03-12 CN claimed
CN-110391440-B Polymer proton exchange membrane and preparation method thereof 深圳质子航新能源科技有限公司 2021-03-30 CN disclosed
CN-107980042-A As ROR gamma agonists and for treating aryl dihydro -2H- benzos [b] [1,4] oxazines sulfonamide and the related compound of disease 莱斯拉公司 2018-05-01 CN disclosed
CN-104752171-B gap filling material and method 台湾积体电路制造股份有限公司 2018-02-27 CN disclosed
CN-107531880-A Alkali soluble resin 长濑化成株式会社 2018-01-02 CN disclosed
CN-104051380-B Wiring system and technique 台湾积体电路制造股份有限公司 2017-08-15 CN disclosed
US-20170072075-A1 Chelated PSMA Inhibitors CANCER TARGETED TECHNOLOGY LLC 2017-03-16 US disclosed
CN-104411739-B Aromatics dispersant composition 路博润高级材料公司 2017-03-08 CN disclosed
EP-1289970-A1 3-ARYLISOTHIAZOLES AND THEIR USE AS HERBICIDES BASF AKTIENGESELLSCHAFT (DE) 2003-03-12 EP disclosed
WO-2002042275-A1 2-ARYL-5-TRIFLUOROMETHYLPYRIDINES BASF AKTIENGESELLSCHAFT (DE) 2002-05-30 WO disclosed
WO-2001087863-A1 3-ARYLISOTHIAZOLES AND THEIR USE AS HERBICIDES BASF AKTIENGESELLSCHAFT (DE) 2001-11-22 WO disclosed
EP-0807120-B1 RUTHENIUM HYDROGENATION CATALYSTS DU PONT (US) 2000-04-26 EP disclosed
EP-0807120-A1 RUTHENIUM HYDROGENATION CATALYSTS E.I. DU PONT DE NEMOURS AND COMPANY (US) 1997-11-19 EP disclosed
US-5689003-A CATALYTIC HYDROGENATION OF NITRILES TO FORM AMINES WITH COMPLEXES E. I. DU PONT DE NEMOURS AND COMPANY (US) 1997-11-18 US disclosed
US-5554778-A IMINATION, REDUCTIVE HYDROLYSIS E. I. DU PONT DE NEMOURS AND COMPANY (US) 1996-09-10 US disclosed
WO-1996023803-A1 RUTHENIUM HYDROGENATION CATALYSTS E.I. DU PONT DE NEMOURS AND COMPANY (US) 1996-08-08 WO disclosed