SCHEMBL6745481

SCHEMBL6745481

CC(C)=CC(C)=C[W]C=C(C)C=C(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6745475 1.00
SCHEMBL5986871 0.69
SCHEMBL5986869 0.69
SCHEMBL9509929 0.67
SCHEMBL9509932 0.67
SCHEMBL19509996 0.67
SCHEMBL27322251 0.65
SCHEMBL18456489 0.65
SCHEMBL20605353 0.65
SCHEMBL8464237 0.62

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6812146-B2 Chemical vapor deposition process for depositing titanium nitride films from an organo-metallic compound MICRON TECHNOLOGY, INC. 2004-11-02 US claimed
US-20030165619-A1 Chemical vapor deposition process for depositing titanium nitride films from an organo-metallic compound AKRAM SALMAN (US) 2003-09-04 US claimed
US-6531192-B2 Chemical vapor deposition process for depositing titanium nitride films from an organo-metallic compound MICRON TECHNOLOGY, INC. 2003-03-11 US claimed
US-20020051847-A1 Chemical vapor deposition process for depositing titanium nitride films from an organo-metallic compound MICRON SEMICONDUCTOR PRODUCTS, INC. 2002-05-02 US claimed
US-6338880-B1 Chemical vapor deposition process for depositing titanium nitride films from an organometallic compound MICRON TECHNOLOGY, INC. 2002-01-15 US claimed
US-6812146-B2 Chemical vapor deposition process for depositing titanium nitride films from an organo-metallic compound MICRON TECHNOLOGY, INC. 2004-11-02 US disclosed
US-6696109-B2 Chemical vapor deposition process for depositing titanium silicide films from an organometallic compound MICRON TECHNOLOGY, INC. 2004-02-24 US disclosed
US-20030165619-A1 Chemical vapor deposition process for depositing titanium nitride films from an organo-metallic compound AKRAM SALMAN (US) 2003-09-04 US disclosed
US-20030072892-A1 Chemical vapor deposition process for depositing titanium silicide films from an organometallic compound MICRON SEMICONDUCTOR PRODUCTS, INC. 2003-04-17 US disclosed
US-6531192-B2 Chemical vapor deposition process for depositing titanium nitride films from an organo-metallic compound MICRON TECHNOLOGY, INC. 2003-03-11 US disclosed
US-6500501-B1 Chemical vapor deposition process for depositing titanium silicide films from an organometallic compound MICORN TECHNOLOGY, INC. 2002-12-31 US disclosed
US-6500501-B1 Chemical vapor deposition process for depositing titanium silicide films from an organometallic compound MICORN TECHNOLOGY, INC. 2002-12-31 US disclosed
US-20020051847-A1 Chemical vapor deposition process for depositing titanium nitride films from an organo-metallic compound MICRON SEMICONDUCTOR PRODUCTS, INC. 2002-05-02 US disclosed
US-6338880-B1 Chemical vapor deposition process for depositing titanium nitride films from an organometallic compound MICRON TECHNOLOGY, INC. 2002-01-15 US disclosed
US-6168837-B1 Chemical vapor depositions process for depositing titanium silicide films from an organometallic compound MICRON TECHNOLOGY, INC. 2001-01-02 US disclosed
US-6168837-B1 Chemical vapor depositions process for depositing titanium silicide films from an organometallic compound MICRON TECHNOLOGY, INC. 2001-01-02 US disclosed